교원프로필

김종규 사진
교원에 대한 정보를 나타내는 표입니다.
성명 김종규
소속 신소재공학과
전화번호 279-2149
E-mail kimjk@postech.ac.kr
Homepage http://npol.postech.ac.kr

학력

  • 1997.03 ~ 2002.02 포항공과대학교 (박사-나노소재)
  • 1993.03 ~ 1997.02 연세대학교 (학사-금속공학)

주요경력

  • 2006.06 ~ 2009.06 : Rensselaer Polytechnic Institute Electrical, Computer and Systems Engineering Department
  • 2003.04 ~ 2006.05 : Rensselaer Polytechnic Institute Electrical, Computer and Systems Engineering Department
  • 2002.02 ~ 2003.03 : POSTECH 신소재공학과

전문분야

학술지

국제전문학술지

  • An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, SENSORS AND ACTUATORS B-CHEMICAL, , 255, 1663-1670 (2018)
  • Observation of space-charge-limited current in AlGaN/GaN ultraviolet light-emitting diodes, MATERIALS LETTERS, , 214, 217-219 (2018)
  • Fundamental Limitations of Wide-Bandgap Semiconductors for Light-Emitting Diodes, ACS Energy Letters, , 3, 655-662 (2018)
  • Wavelength-dependent visible light response in vertically aligned nanohelical TiO2-based Schottky diodes, APPLIED PHYSICS LETTERS, , 112, - (2018)
  • Strain-induced Indium Clustering in Non-polar InGaN Quantum Wells, ACTA MATERIALIA, , , - (2018)
  • Highly-sensitive H2 sensor operating at room temperature using Pt/TiO2 nanoscale Schottky contacts, SENSORS AND ACTUATORS B-CHEMICAL, , 241, 985-992 (2017)
  • Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 6, Q42-Q52 (2017)
  • White light-emitting diodes: History, progress, and future, LASER & PHOTONICS REVIEWS, , , - (2017)
  • Flexible Near-Field Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics, NEURON, , 93, 509-521.E3 (2017)
  • Pressure dependent growth of wafer-scale few-layer h-BN by metal-organic chemical vapor deposition, CRYSTAL GROWTH & DESIGN, , 17, 2569-2575 (2017)
  • Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition, AIP ADVANCES, , 7, - (2017)
  • Optical and facet dependent carrier recombination properties of hendeca-facet InGaN/GaN micro light emitters, CRYSTAL GROWTH & DESIGN, , 17, 3649-3655 (2017)
  • Image processing-based analysis of interfacial phases in brazed stainless steel with Ni-based filler metal, MATERIALS CHARACTERIZATION, , 130, 278-284 (2017)
  • Haze-Free Highly Transparent Glass Substrates with Nanostructured Surface by Using Self-Assembled Ag Etch Masks, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, R6-R11 (2016)
  • Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film, SCIENTIFIC REPORTS, , 6, 19580- (2016)
  • Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes, JOURNAL OF APPLIED PHYSICS, , 119, 19580- (2016)
  • Energy bandgap variation in oblique angle-deposited indium tin oxide, APPLIED PHYSICS LETTERS, , 108, 41910- (2016)
  • An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission, SCIENTIFIC REPORTS, , 6, 22537- (2016)
  • Effect of curved graphene oxide in a GaN light-emitting-diode for improving heat dissipation with a patterned sapphire substrate, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 31, 85010- (2016)
  • Unassisted photoelectrochemical water splitting exceeding 7% solar to hydrogen conversion efficiency using photon recycling, Nature Communications, , 7, 11943- (2016)
  • Wafer-scale antireflective protection layer of solution-processed TiO2 nanorods for high performance silicon-based water splitting photocathodes, JOURNAL OF MATERIALS CHEMISTRY A, , 4, 9477-9485 (2016)
  • Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films, NATURE MATERIALS, , 15, 1113-1119 (2016)
  • Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes, APPLIED PHYSICS LETTERS, , 109, 101103- (2016)
  • Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission, ACS Photonics, , 3, 2030-2034 (2016)
  • A wafer-scale antireflective protection layer of solution-processed TiO2 nanorods for high performance silicon-based water splitting photocathodes, JOURNAL OF MATERIALS CHEMISTRY A, , 4, 9477-9485 (2016)
  • Enhanced power conversion efficiency of dye-sensitized solar cells with multifunctional photoanodes based on a three-dimensional TiO2 nanohelix array, SOLAR ENERGY MATERIALS AND SOLAR CELLS, , 132, 47-55 (2015)
  • Correlative analysis of strain-charge relationship in an InGaN/GaN multiquantum well structure using inline electron holography, Advanced Materials Interfaces, , 2, - (2015)
  • Overcoming the Fundamental Limitation in Light-Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission, Light-Science & Applications, , 3, 9- (2015)
  • Polarization-engineered high efficiency GaInN light-emitting diodes optimized by genetic algorithm, IEEE PHOTONICS JOURNAL, , 7, 1300209- (2015)
  • Opto-electronic properties of TiO2 nanohelices with embedded HC(NH2)(2)PbI3 perovskite solar cells, Journal of Materials Chemistry A, , 3, 9179-9186 (2015)
  • Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, LIGHT-SCIENCE & APPLICATIONS, , 4, - (2015)
  • Correlative High-Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer, ADVANCED MATERIALS INTERFACES, , 2, - (2015)
  • Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior, AIP Advances, , 5, - (2015)
  • Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes, APPLIED PHYSICS EXPRESS, , 8, - (2015)
  • Three-Dimensional Metal-Oxide Nanohelix Arrays Fabricated by Oblique Angle Deposition: Fabrication, Properties, and Applications, NANOSCALE RESEARCH LETTERS, , 10, - (2015)
  • The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes, CURRENT APPLIED PHYSICS, , 15, 1222-1225 (2015)
  • Onset of the Efficiency Droop in GalnN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation, ACS PHOTONICS, , 2, 1013-1018 (2015)
  • Spatially graded TiO2-SiO2 Bragg reflector with rainbow-colored photonic band gap, OPTICS EXPRESS, , 23, 17568-17575 (2015)
  • Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, OPTICS EXPRESS, , 23, 15398-15404 (2015)
  • Temperature dependence of efficiency in GaInN/GaN light-emitting diodes with a GaInN underlayer, International Journal of Applied Ceramic Technology, , , - (2015)
  • Visible Color Tunable Emission in Three-Dimensional Light Emitting Diodes by MgO Passivation of Pyramid Tip, ACS Applied Materials and Interfaces, , 7, 27743-27748 (2015)
  • ZnO nanowire-based antireflective coatings with double-nanotextured surfaces, ACS APPLIED MATERIALS & INTERFACES, , 6, 1375-1379 (2014)
  • Three-Dimensional Branched Nanowire Heterostructures as Efficient Light-Extraction Layer in Light-Emitting Diodes, Advanced Functional Materials, , 24, 3384-3391 (2014)
  • Three-Dimensional Nanostructured Indium-Tin-Oxide Electrodes for Enhanced Performance of Bulk Heterojunction Organic Solar Cells, ADVANCED ENERGY MATERIALS, , 4, 1301566- (2014)
  • Down-conversion in Tm3 +/Yb3 + doped glasses for multicrystalline silicon photo-voltaic module efficiency enhancement, Journal of non-crystalline solids, , 388, 181-183 (2014)
  • Strong Correlation between Capacitance and Breakdown Voltage of GaInN/GaN Light-Emitting Diodes, ELECTRONIC MATERIALS LETTERS, , 10, 1155-1157 (2014)
  • Efficient photoelectrochemical hydrogen production from bismuth vanadate-decorated tungsten trioxide helix nanostructures, NATURE COMMUNICATIONS, , 5, - (2014)
  • Graphene oxide nanosheet wrapped white-emissive conjugated-polymer nanoparticles, ACS Nano, , 8, 4248-4256 (2014)
  • Enhanced power conversion efficiency of quantum dot sensitized solar cells with near single-crystalline TiO2 nanohelixes used as photoanodes, Optics Express, , 22, A867-A879 (2014)
  • Down-conversion in Tm3+/Yb3+ doped glasses for multicrystalline silicon photo-voltaic module efficiency enhancement, JOURNAL OF NON-CRYSTALLINE SOLIDS, , 383, 181-183 (2014)
  • Strain mapping of LED devices by dark-field inline electron holography: Comparison between deterministic and iterative phase retrieval approaches, ULTRAMICROSCOPY, , 127, 119-125 (2013)
  • Efficiency droop in light-emitting diodes: Challenges and countermeasures, LASER & PHOTONICS REVIEWS, , 7, 8-421 (2013)
  • Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes, Photonics Journal, IEEE, , 5, - (2013)
  • Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer, Applied Physics Letters, , 103, - (2013)
  • Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic-filtering contacts, Journal of Materials Chemistry C, , 1, - (2013)
  • Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes, Journal of Nanoscience and Nanotechnology, , 13, 5715-5718 (2013)
  • Freestanding luminescent films of nitrogen-rich carbon nanodots towards large scale phosphor-based white light-emitting devices, Chemistry of Materials, , 25, 1893-1899 (2013)
  • A near single crystalline TiO2 nanohelix array: enhanced gas sensing performance and its application as a monolithically integrated electronic nose, Analyst, , 138, 443-450 (2013)
  • Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings, Optics Express, , 21, A157-A166 (2013)
  • Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using Multiple-Discrete-Layer Tailored- and Low-Refractive Index Anti-Reflection Coatings, Advanced Functional Materials, , 23, 583-590 (2013)
  • Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma, Applied Physics Letters, , 100, - (2012)
  • Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities, APPLIED PHYSICS LETTERS, , 100, - (2012)
  • Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions, Physica Status Solidi (C) Current Topics in Solid State Physics, , 9, 851-854 (2012)
  • Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors, Scientific Reports 2, , , - (2012)
  • Strain mapping of LED devices by dark-field inline electron holography: Comparison between deterministic and iterative phase retrieval approaches, ULTRAMICROSCOPY, , , - (2012)
  • Reduction of efficiency droop in GaInN/GaN Light-emitting diodes with thick AlGaN cladding layers, Electronic Materials Letters, , 8, 1-4 (2012)
  • Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN, APPLIED PHYSICS LETTERS, , 98, - (2011)
  • Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, , 208, 947-950 (2011)
  • Comparison of metal-organic decomposed (MOD) cerium oxide (CeO(2)) gate deposited on GaN and SiC substrates Preface, JOURNAL OF CRYSTAL GROWTH, , 326, 1-1 (2011)
  • Nanostructured Multilayer Tailored-Refractive-Index Antireflection Coating for Glass with Broadband and Omnidirectional Characteristics, APPLIED PHYSICS EXPRESS, , 4, - (2011)
  • Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop, APPLIED PHYSICS LETTERS, , 99, 181115-181117 (2011)
  • Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-emitting diodes, JOURNAL OF APPLIED PHYSICS, , 110, - (2011)
  • Efficiency droop in GaInN high-power light-emitting diodes, International Journal of High Speed Electronics and Systems, , 20, 247-265 (2011)
  • Analysis of reverse tunnelling current in GaInN light-emitting diodes, ELECTRONICS LETTERS, , 46, 156-157 (2010)
  • Performance of Antireflection Coatings Consisting of Multiple Discrete Layers and Comparison with Continuously Graded Antireflection Coatings, APPLIED PHYSICS EXPRESS, , 3, 82502- (2010)
  • Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes, JOURNAL OF APPLIED PHYSICS, , 107, 63102- (2010)
  • Demonstration of optical interference filters utilizing tunable refractive index layers, OPTICS EXPRESS, , 18, A594-A599 (2010)
  • Characteristics of Blue and Ultraviolet Light-Emitting Diodes with Current Density and Temperature, ELECTRONIC MATERIALS LETTERS, , 6, 51-53 (2010)
  • EFFECT OF CHIP GEOMETRY ON BREAKDOWN VOLTAGE OF GAINN LIGHT-EMITTING DIODES, ELECTRONICS LETTERS, , 45, 755-756 (2009)
  • REDUCTION IN EFFICIENCY DROOP, FORWARD VOLTAGE, IDEALITY FACTOR, AND WAVELENGTH SHIFT IN POLARIZATION-MATCHED GAINN/GAINN MULTI-QUANTUM-WELL LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS, , 94, 11113-11113 (2009)
  • The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes, APPLIED PHYSICS LETTERS, , 94, - (2009)
  • On resonant optical excitation and carrier escape in GaInN/GaN quantum wells, APPLIED PHYSICS LETTERS, , 94, - (2009)
  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities, APPLIED PHYSICS LETTERS, , 94, - (2009)
  • Broadband omnidirectional antireflection coatings optimized by genetic algorithm, OPTICS LETTERS, , 34, 728-730 (2009)
  • High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays, APPLIED PHYSICS LETTERS, , 94, - (2009)
  • Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions, OPTICS EXPRESS, , 17, 10806-10813 (2009)
  • Engineered nanoporous and nanostructured films, MATERIALS TODAY, , 12, 36-45 (2009)
  • Partial Polarization Matching in GaInN-Based Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency Droop, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, , 15, 1122-1127 (2009)
  • Color tunable light-emitting diodes with modified pulse-width modulation, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, , 3, 284-286 (2009)
  • Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes, APPLIED PHYSICS LETTERS, , 95, 191105- (2009)
  • Refractive-Index-Matched Indium-Tin-Oxide Electrodes for Liquid Crystal Displays, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, - (2009)
  • Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers, APPLIED PHYSICS LETTERS, , 95, 241109-241109 (2009)
  • Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact, ADVANCED MATERIALS, , 20, 801-801 (2008)
  • Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm, OPTICS EXPRESS, , 16, 5290-5298 (2008)
  • High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes, JOURNAL OF APPLIED PHYSICS, , 103, - (2008)
  • Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition, APPLIED PHYSICS LETTERS, , 93, - (2008)
  • Realization of a near-perfect antireflection coating for silicon solar energy utilization, OPTICS LETTERS, , 33, 2527-2529 (2008)
  • Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars, APPLIED PHYSICS LETTERS, , 93, - (2008)
  • Transcending the replacement paradigm of solid-state lighting, OPTICS EXPRESS, , 16, 21835-21842 (2008)
  • Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop, APPLIED PHYSICS LETTERS, , 93, - (2008)
  • Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N, APPLIED PHYSICS LETTERS, , 93, - (2008)
  • Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics, APPLIED PHYSICS LETTERS, , 93, - (2008)
  • Kinetic study of Al-mole fraction in AlxGa1-xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy, APPLIED PHYSICS LETTERS, , 90, - (2007)
  • Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer, JOURNAL OF CRYSTAL GROWTH, , 299, 59-62 (2007)
  • Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition, PHYSICA B-CONDENSED MATTER, , 391, 35-41 (2007)
  • Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material, APPLIED PHYSICS LETTERS, , 90, - (2007)
  • Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection, NATURE PHOTONICS, , 1, 176-179 (2007)
  • Optimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxy, JOURNAL OF ELECTRONIC MATERIALS, , 36, 533-537 (2007)
  • Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions, JOURNAL OF APPLIED PHYSICS, , 101, - (2007)
  • Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates, APPLIED PHYSICS LETTERS, , 91, - (2007)
  • Low-refractive-index materials: A new class of optical thin-film materials, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, , 244, 3002-3008 (2007)
  • Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources, OPTICS EXPRESS, , 15, 10452-10457 (2007)
  • Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector, OPTICS EXPRESS, , 15, 11213-11218 (2007)
  • Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, APPLIED PHYSICS LETTERS, , 91, - (2007)
  • Origin of efficiency droop in GaN-based light-emitting diodes, APPLIED PHYSICS LETTERS, , 91, - (2007)
  • Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes, APPLIED PHYSICS LETTERS, , 91, - (2007)
  • GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer, APPLIED PHYSICS LETTERS, , 88, - (2006)
  • Light extraction in GaInN light-emitting diodes using diffuse omnidirectional reflectors, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 153, G105-G107 (2006)
  • Very low-refractive-index optical thin films consisting of an array of SiO2 nanorods, OPTICS LETTERS, , 31, 601-603 (2006)
  • Effect of C/Si ratio on deep levels in epitaxial 4H-SiC, APPLIED PHYSICS LETTERS, , 88, - (2006)
  • Surface studies of SiC epitaxial layers grown by chemical vapor deposition, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, , 129, 22-30 (2006)
  • GaN light-emitting triodes for high-efficiency hole injection, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 153, G734-G737 (2006)
  • Quantitative assessment of diffusivity and specularity of surface-textured reflectors for light extraction in light-emitting diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 24, 1627-1630 (2006)
  • Trapped whispering-gallery optical modes in white light-emitting diode lamps with remote phosphor, APPLIED PHYSICS LETTERS, , 89, - (2006)
  • Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy, APPLIED PHYSICS LETTERS, , 89, - (2006)
  • Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts, APPLIED PHYSICS LETTERS, , 89, - (2006)
  • Solid-state lighting - a benevolent technology, REPORTS ON PROGRESS IN PHYSICS, , 69, 3069-3099 (2006)
  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods, APPLIED PHYSICS LETTERS, , 86, - (2005)
  • Solid-state light sources getting smart, SCIENCE, , 308, 1274-1278 (2005)
  • Analysis of high-power packages for phosphor-based white-light-emitting diodes, APPLIED PHYSICS LETTERS, , 86, - (2005)
  • Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 44, - (2005)
  • Silica nanorod-array films with very low refractive indices, NANO LETTERS, , 5, 1385-1387 (2005)
  • Internal high-reflectivity omni-directional reflectors, APPLIED PHYSICS LETTERS, , 87, - (2005)
  • Junction temperature in ultraviolet light-emitting diodes, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, , 44, 7260-7266 (2005)
  • Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition, JOURNAL OF APPLIED PHYSICS, , 98, - (2005)
  • GaN MSM ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contacts, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 151, G190-G195 (2004)
  • P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20%, APPLIED PHYSICS LETTERS, , 84, 3310-3312 (2004)
  • GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector, APPLIED PHYSICS LETTERS, , 84, 4508-4510 (2004)
  • Ohmic contacts for high power LEDs, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, , 201, 2831-2836 (2004)
  • Metal/GaN reaction chemistry and their electrical properties, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, , 241, 2771-2774 (2004)
  • Electrical properties of metal contacts on laser-irradiated n-type GaN, APPLIED PHYSICS LETTERS, , 82, 580-582 (2003)
  • Effect of microstructural change on magnetic property of Mn-implanted p-type GaN, APPLIED PHYSICS LETTERS, , 82, 583-585 (2003)
  • Effect of surface treatment on Schottky barrier height of p-type GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 150, G209-G211 (2003)
  • Microstructural study of Pt contact on p-type GaN, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 21, 87-90 (2003)
  • Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes, JOURNAL OF APPLIED PHYSICS, , 94, 7201-7205 (2003)
  • Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on p-type GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 149, G266-G270 (2002)
  • Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy, JOURNAL OF APPLIED PHYSICS, , 91, 9214-9217 (2002)
  • Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures, APPLIED PHYSICS LETTERS, , 81, 1249-1251 (2002)
  • Low-resistance Ti/Al ohmic contact on undoped ZnO, JOURNAL OF ELECTRONIC MATERIALS, , 31, 868-871 (2002)
  • X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN, JOURNAL OF APPLIED PHYSICS, , 92, 6671-6678 (2002)
  • GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact, APPLIED PHYSICS LETTERS, , 81, 4655-4657 (2002)
  • Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, L8-L12 (2001)
  • Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, 129-133 (2001)
  • Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN, JOURNAL OF ELECTRONIC MATERIALS, , 30, 170-174 (2001)
  • Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasma, APPLIED PHYSICS LETTERS, , 78, 2015-2017 (2001)
  • Catalytic role of Au in Ni/Au contact on GaN(0001), APPLIED PHYSICS LETTERS, , 78, 3773-3775 (2001)
  • Positron annihilation study of Pd contacts on impurity-doped GaN, APPLIED PHYSICS LETTERS, , 78, 4142-4144 (2001)
  • The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 39, 23-27 (2001)
  • Ohmic contact formation mechanism of Ni on n-type 4H-SiC, APPLIED PHYSICS LETTERS, , 79, 1816-1818 (2001)
  • Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization, APPLIED PHYSICS LETTERS, , 79, 1822-1824 (2001)
  • Au catalyzed structural and electrical evolution of Ni/Au contact to GaN, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, , 188, 379-382 (2001)
  • High-temperature structural behavior of Ni/Au contact on GaN (0001), MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, , 6, 1-7 (2001)
  • Room Temperature Ohmic contact on n-type GaN using plasma treatment, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, , 6, 1-7 (2001)
  • Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatment, ELECTROCHEMICAL AND SOLID STATE LETTERS, , 3, 53-55 (2000)
  • 3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications, ELECTRONICS LETTERS, , 36, 262-264 (2000)
  • Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 147, 2297-2302 (2000)
  • Pretreatment effects by aqua-regia solution on field emission of diamond film, APPLIED PHYSICS LETTERS, , 76, 3694-3696 (2000)
  • Microstructural investigation of Ni/Au ohmic contact on p-type GaN, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 147, 4645-4651 (2000)
  • Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regia, ELECTRONICS LETTERS, , 35, 1676-1678 (1999)
  • Reduction of ohmic contact resistivity on p-type GaN by surface treatment, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, , 176, 763-766 (1999)
  • Effect of An overlayer on Ni contacts to p-type GaN, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 17, 2675-2678 (1999)
  • Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatment, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 35, S1063-S1066 (1999)
  • Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN, SOLID-STATE ELECTRONICS, , 43, 435-438 (1999)
  • Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy, APPLIED PHYSICS LETTERS, , 74, 2289-2291 (1999)
  • Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaN, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 17, 497-499 (1999)
  • Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment, APPLIED PHYSICS LETTERS, , 73, 2953-2955 (1998)
  • Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 44, - (0020)

국내전문학술지

일반학술지

  • MICROSTRUCTURAL AND ELECTRICAL INVESTIGATION OF THE P-TYPE GAN IMPLANTED WITH MN+ IONS, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, , 234, 943-946 (2002)
  • REDUCTION OF OHMIC CONTACT RESISTIVITY ON P-TYPE GAN BY SURFACE TREATMENT, CURRENT APPLIED PHYSICS, , 1, 385-388 (2001)
  • INVESTIGATION FOR THE FORMATION OF POLARIZATION-INDUCED 2-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, , 228, 621-624 (2001)

학술회의논문

  • Enhancement of light extraction in GaN ultraviolet light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive layer, PROCEEDINGS OF SPIE FIFTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 0, 0, - (2005)
  • Enhancement of light extraction in GaN ultraviolet light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive layer, PROCEEDINGS OF SPIE FIFTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 0, 0, - (2005)
  • Transparent ohmic contacts on p-GaN using indium tin oxide overlayer, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 235- (2002)
  • Transparent ohmic contacts on p-GaN using indium tin oxide overlayer, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 235- (2002)
  • Microstructural and electrical investigation of the p-type GAN implanted with Mn+ ions, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 331- (2002)
  • Microstructural and electrical investigation of the p-type GAN implanted with Mn+ ions, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 331- (2002)
  • GaN-based metal-semiconductor-metal ultraviolet photodetectors with Ir and Ru Schottky contacts, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 57- (2002)
  • GaN-based metal-semiconductor-metal ultraviolet photodetectors with Ir and Ru Schottky contacts, IWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES, 0, 0, 57- (2002)
  • The mechanism of Ti/Al/Ni/Au ohmic contact on AlGaN/GaN heterostructure field effect transistor, ABSTRACT, 0, 0, 205- (2001)
  • The mechanism of Ti/Al/Ni/Au ohmic contact on AlGaN/GaN heterostructure field effect transistor, ABSTRACT, 0, 0, 205- (2001)
  • X-ray photoemission determination of the surface Fermi level motion and pinning on n- and a-GaN during the formation of Au, Ni and Ti metal contacts, ABSTRACT, 0, 0, 215- (2001)
  • X-ray photoemission determination of the surface Fermi level motion and pinning on n- and a-GaN during the formation of Au, Ni and Ti metal contacts, ABSTRACT, 0, 0, 215- (2001)
  • Synchrotron radiation photoemission spectroscopy study of Pt transparent ohmic contacts on p-type GaN during annealing, ABSTRACT, 0, 0, 206- (2001)
  • GaN blue-light-emitting diode using room-temperature ohmic contacts, PROCEEDING OF SPIE, 0, 0, 113-124 (2001)
  • Fermi level pinning and band bending determination via X-ray photoemission spectroscopy, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 0, 0, 598- (2001)
  • Au catalyzed structural evoluation of Ni/Au contact to GaN, ABSTRACTS, 0, 0, 48- (2001)
  • Au catalyzed structural evoluation of Ni/Au contact to GaN, ABSTRACTS, 0, 0, 48- (2001)
  • Study on InAs/InP quantum dots by Synchrotron Radiation X-ray Diffraction and Photoemission Spectroscopy, ABSTRACTS, 0, 0, 150- (2001)
  • Study on InAs/InP quantum dots by Synchrotron Radiation X-ray Diffraction and Photoemission Spectroscopy, ABSTRACTS, 0, 0, 150- (2001)
  • Ohmic contact formation mechanism of Ni-based contact on n-type 4H-SiC, ABSTRACTS, 0, 0, 110- (2001)
  • Ohmic contact formation mechanism of Ni-based contact on n-type 4H-SiC, ABSTRACTS, 0, 0, 110- (2001)
  • Improved low resistance ohmic contact of Pd/Ni on p-type GaN, ABSTRACTS, 0, 0, 109- (2001)
  • Improved low resistance ohmic contact of Pd/Ni on p-type GaN, ABSTRACTS, 0, 0, 109- (2001)
  • Effects of Au overlayer on the thermal stability of Pt-based ohmic contacts on p-type GaN, ABSTRACTS, 0, 0, 179- (2001)
  • Effects of Au overlayer on the thermal stability of Pt-based ohmic contacts on p-type GaN, ABSTRACTS, 0, 0, 179- (2001)
  • Ohmic contact on p-type GaN and its application to the fabrication of GaN blue light emitting diode, PROCEEDING OF 2000 CHINA-KOREA JOINT SYMPOSIUM ON SEMICONDUCTOR PHYSICS AND DEVICE, 0, 0, 25-25 (2000)
  • Structural evolution of Ni/Au contacts on GaN(000l), ABSTRACTS, 0, 0, 179- (2000)
  • Structural evolution of Ni/Au contacts on GaN(000l), ABSTRACTS, 0, 0, 179- (2000)
  • Nonalloyed Ti/Al ohmic contact ro n-type GaN, ABSTRACT, 0, 0, 149- (2000)
  • Nonalloyed Ti/Al ohmic contact ro n-type GaN, ABSTRACT, 0, 0, 149- (2000)

학회발표

  • Defect-related electrical conduction in few-layer hexagonal Boron Nitride grown by metal-organic chemical vapor deposition, ., 0, 0, - (2017)
  • An Array of Metal Oxides Nanoscale Hetero p-n Junctions Toward Designable and Highly-Selective Gas Sensors, ., 0, 0, - (2017)
  • An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors, 2017 MRS Fall meeting & Exhibit, 0, 0, - (2017)
  • Wafer-Scale van der Waals Epitaxy of 3D GaN on 2D h-BN Using MOCVD, ., 0, 0, - (2017)
  • Wavelength-Dependent Photoresponse at the Metal/Nanostructured TiO2 Interfaces in the Visible Range and Its Persistence, ., 0, 0, - (2017)
  • Titanium and Carbon Co-doped Iron Oxide Film for Efficient Photoelectrochemical Water Splitting, ., 0, 0, - (2017)
  • Amorphous Tin Oxide Helix Nanostructures as an Anode for Highly Efficient Na-Ion Batteries, ., 0, 0, - (2017)
  • Enhanced light extraction from AlGaN-based deep-ultraviolet light-emitting diodes, , 0, 0, - (2017)
  • A route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission, ., 0, 0, - (2017)
  • Tin Oxide Nanohelix Structures with Thin Iron Oxide Layer for Efficient Photoelectrochemical Water Splitting, ., 0, 0, - (2016)
  • Unassisted Photoelectrochemical Water Splitting Exceeding 7% Solar-to-Hydrogen Conversion Efficiency Using Photon Recycling, ., 0, 0, - (2016)
  • Highly-sensitive H2 sensor operating at room temperature using Pt/TiO2 nanoscale Schottky contacts, ., 0, 0, - (2016)
  • Tin oxide nanohelix structures with thin iron oxide layer for efficient photoelectrochemical water splitting, ., 0, 0, - (2016)
  • Preferential Outcoupling of Strong in-Plane Emission from AlGaN-based Deep-Ultraviolet Light-Emitting Diodes, ., 0, 0, - (2016)
  • External quantum efficiency variation on temperature and current density in red, blue, and deep ultraviolet light-emitting diodes, ., 0, 0, - (2016)
  • Facet-dependent optical properties and carrier recombination behavior of hendeca-facet panchromatic light emitter, ., 0, 0, - (2016)
  • Wafer-scale growth and characterization of multi –layer h-BN by metal-organic chemical vapor deposition, ., 0, 0, - (2016)
  • U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, , 0, 0, - (2016)
  • Polarization-Engineered High-Efficiency III-Nitride-based Light-Emitting Diodes Optimized by Genetic Algorithm, , 0, 0, - (2016)
  • An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission, ., 0, 0, - (2016)
  • Nanostructured Thin-film Materials Fabricated by Oblique Angle Deposition and Their Applications, ., 0, 0, - (2016)
  • Micro-dot deep ultraviolet light-emitting diodes for enhanced out-coupling efficiency, ., 0, 0, - (2016)
  • Wafer-scale growth and characterization of multi –layer h-BN by metal-organic chemical vapor deposition, ., 0, 0, - (2016)
  • Elegant routes to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes, ., 0, 0, - (2016)
  • N-type sensing behavior in P-type NiO gas sensor by modifying contact properties, ., 0, 0, - (2016)
  • Ultrasensitive hydrogen sensor operating at room temperature by Pt/TiO2 nanoscale Schottky contacts, ., 0, 0, - (2016)
  • Unassisted Photoelectrochemical Water Splitting Exceeding 7% Solar-to-Hydrogen Conversion Efficiency Using Photon Recycling, ., 0, 0, - (2016)
  • Tin oxide nanohelix structures with thin iron oxide layer for efficient photoelectrochemical water splitting, ., 0, 0, - (2016)
  • Ultrasensitive hydrogen sensor operating at room temperature by Pt/TiO2 nanoscale Schottky contacts, ., 0, 0, - (2016)
  • Growth and Characterization of Hexagonal Boron Nitrides by Metal-Organic Vapor Phase Epitaxy, ., 0, 0, - (2016)
  • Preferential Outcoupling of Strong in-Plane Emission from AlGaN-based Deep-Ultraviolet Light-Emitting Diodes, ., 0, 0, - (2016)
  • Enhancement in light-extraction efficiency of sidewall-emission-enhanced deep ultraviolet light-emitting diodes, ., 0, 0, - (2015)
  • The effect of a GaInN spacer layer on the efficiency droop of GaN-based light-emitting diodes, ., 0, 0, - (2015)
  • Visible Color Tunable Emission in Three-dimensional Light Emitting Diodes by MgO Passivation of Pyramid Tip, ., 0, 0, - (2015)
  • Polarization-Engineered High-Efficiency III-Nitride-based Light-Emitting Diodes Optimized by Genetic Algorithm, ., 0, 0, - (2015)
  • Modulation of hole-injection in GaInN light emitting triodes and its effect on carrier recombination behavior, ., 0, 0, - (2015)
  • U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, ., 0, 0, - (2015)
  • Overcoming the fundamental limitation in light-extraction efficiency of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, ., 0, 0, - (2015)
  • Enhanced light extraction efficiency of AlGaN based deep-ultraviolet light-emitting diodes by utilizing strong sidewall emission, ., 0, 0, - (2015)
  • U-shape phenomenon in the efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, ., 0, 0, - (2015)
  • Enhancement in light-extraction efficiency of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, ., 0, 0, - (2015)
  • Efficient Photoelectrochemical Hydrogen Production Using Helical Nanostructures as a Light Trapping Layer”, ., 0, 0, - (2015)
  • On the Temperature Dependence of Efficiency in III-nitride Light-emitting Diodes, ., 0, 0, - (2015)
  • Multifunctional nanostructured thin-film materials fabricated by oblique-angle deposition for photonics applications, ., 0, 0, - (2015)
  • U-shape phenomenon in the efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, ., 0, 0, - (2015)
  • Nano-helical photoelectrodes for efficient energy harvesting applications, ., 0, 0, - (2015)
  • Enhanced light extraction and electrical properties of deep-ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, ., 0, 0, - (2015)
  • Efficient Photoelectrochemical Hydrogen Production from BiVO4-decorated WO3 Helix Nanostructures, ., 0, 0, - (2015)
  • High Performance Gas Sensors with an Array of Vertically Aligned TiO2 Nano-helixes, ., 0, 0, - (2015)
  • Enhanced light extraction and electrical properties of deep-ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission, ., 0, 0, - (2015)
  • Three-dimensional nanostructured materials for energy harvesting applications, ., 0, 0, - (2015)
  • Temperature dependence of efficiency in GaInN/GaN light-emitting diodes with a strain-control layer, ., 0, 0, - (2015)
  • Reduction of junction temperature in GaN light-emitting diode on patterned sapphire substrate using graphene oxide canallike layer, ., 0, 0, - (2015)
  • Carrier recombination behavior with varied hole-injection efficiency modulated by lateral electric field in GaN/InGaN-based light emitting triodes, ., 0, 0, - (2015)
  • Overcoming the Fundamental Light-Extraction Efficiency Limitations of Deep-Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission, ., 0, 0, - (2015)
  • Enhanced phosphor conversion efficiency of GaN-based white LEDs with quantum dot incorporated phosphor by using dichroic filter, ., 0, 0, - (2015)
  • U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes, ., 0, 0, - (2015)
  • Enhanced Light Extraction and Electrical Properties of Deep-Ultraviolet Light-Emitting Diodes by Al-coated Omnidirectional reflector, ., 0, 0, - (2015)
  • Broadband and high seletivity circular polarization discriminators based on metal-nanoparticle-decorated chiral metal oxides heterostructure, ., 0, 0, - (2014)
  • Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer, ., 0, 0, - (2014)
  • Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic filtering contacts, ., 0, 0, - (2014)
  • Enhanced Light Extraction and Electrical Properties of Deep-Ultraviolet Light-Emitting Diodes by Al-coated Omnidirectional reflector, ., 0, 0, - (2014)
  • Enhanced Optical and Electrical Properties of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes by Selective-Area-Grown GaN microstructures, ., 0, 0, - (2014)
  • Efficient Photoelectrochemical Hydrogen Production from BiVO4-decorated WO3 Helix Nanostructures, ., 0, 0, - (2014)
  • Transparent Electrodes Based on Three-Dimensional Nanohelixes Light Harvesting Applications, ., 0, 0, - (2014)
  • Enhanced Light Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Utilizing TM-dominant Light Emission, ., 0, 0, - (2014)
  • Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic-filtering contacts, ., 0, 0, - (2014)
  • Reduction of efficiency droop and enhanced overall efficiency by graded AlGaN/GaN, ., 0, 0, - (2014)
  • Enhanced phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic filtering contacts, ., 0, 0, - (2014)
  • Evolving Light-Emitting Diodes by Genetic Algorithm-based Optimization, ., 0, 0, - (2014)
  • Three-Dimensional WO3-Nanohelixes-based Hybridized Photoanodes for Efficient Solar Water Splitting, ., 0, 0, - (2014)
  • Enhanced Light Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Al-coated Selective-Area-Grown GaN stripes, ., 0, 0, - (2014)
  • Evolving Light-Emitting Diodes by Genetic Algorithm-based Optimization, ., 0, 0, - (2014)
  • AlGaN-based Deep Ultraviolet Light-Emitting Diodes : Challenges and Opportunities, ., 0, 0, - (2014)
  • WO3 Nano-Helixes Array Photoanode for Enhanced Solar-To-Hydrogen Efficiency of Photoelectrochemical Cells, ., 0, 0, - (2014)
  • Enhanced Light Extraction and Electrical Properties of Deep-Ultraviolet Light-Emitting Diodes by Reflective Contacts on Selective-Area-Grown GaN, ., 0, 0, - (2014)
  • WO3 Nano-Helixes Array Photoanode for Enhanced Solar-To-Hydrogen Efficiency of Photoelectrochemical Cells, ., 0, 0, - (2013)
  • Nano-structured thin-film materials fabricated by oblique-angle deposition for energy harvesting applications, ., 0, 0, - (2013)
  • Direct mapping of strain and charge reorganization in a strained InGaN/GaN with nonpolar orientation using inline electron holography, ., 0, 0, - (2013)
  • Efficiency droop in light-emitting diodes; Challenges and Countermeasures, ., 0, 0, - (2013)
  • Direct mapping of strain and charge reorganization in a strained InGaN/GaN with nonpolar orientation using inline electron holography, ., 0, 0, - (2013)
  • 2-D strain and charge density mapping using inline electron holography with a sub-nanometer resolution, ., 0, 0, - (2013)
  • Probing the effect of hole-injection on the efficiency droop behavior with GaInN light-emitting triode, ., 0, 0, - (2013)
  • Reduction of efficiency droop and enhanced overall efficiency by graded AlGaN/GaN superlattice electron blocking layers, ., 0, 0, - (2013)
  • Evolving light-emitting diodes by genetic algorithm-based optimization, ., 0, 0, - (2013)
  • Freestanding Luminescent Films of Nitrogen-rich Carbon Nanodots Towards Large-scale Phosphor-based White Light-emitting Devices, ., 0, 0, - (2013)
  • Optimization of AlGaN/GaN superlattice electron blocking layers by genetic algorithm for high-efficiency GaN-based light-emitting diodes, ., 0, 0, - (2013)
  • Reduced efficiency droop of GaInN-based light-emitting diodes by using graded AlGaN/GaN superlattice electron blocking layers, ., 0, 0, - (2013)
  • Probing the efficiency droop with GaInN light-emitting triode: effect of hole-injection efficiency on droop behavior, ., 0, 0, - (2013)
  • Enhanced performance of organic solar cells by using three-dimensional nanohelix-array electrodes, ., 0, 0, - (2013)
  • Enhancement of power conversion efficiency of dye-sensitized solar cells by hybridization of TiO2 nano-helixes array and nanoparticles, ., 0, 0, - (2013)
  • Temperature-dependent efficiency droop in GaInN light-emitting diodes, ., 0, 0, - (2013)
  • 2-D strain and charge density mapping using inline electron holography with a sub-nanometer resolution, ., 0, 0, - (2012)
  • High performance gas sensors with an array of TiO2 nano-helixes, ., 0, 0, - (2012)
  • Enhanced performance of dye-sensitized solar cells by using photoelectrode films based on TiO2 nanohelixes filled with TiO2 nanoparticles, ., 0, 0, - (2012)
  • Nano-structured thin films fabricated by oblique angle deposition for energy harvesting applications, ., 0, 0, - (2012)
  • Temperature dependence of the efficiency droop in GaInN light-emitting diodes, ., 0, 0, - (2012)
  • Efficiency droop in GaN-based light-emitting diodes: Mechanisms and solutions, ., 0, 0, - (2012)
  • High efficiency dye sensitized solar cells based on an array of sing-crystalline TiO2 nano-helixes, ., 0, 0, - (2012)
  • Improved power conversion efficiency of polycrystalline Si solar cells by nanostructured broadband and omni-directional antireflection coatings, ., 0, 0, - (2012)
  • Efficiency droop in GaN-based light-emitting diodes: Mechanisms and solutions, ., 0, 0, - (2012)
  • TiO2 nanohelix gas sensors with enhanced performance and potential application as a building block of electronic noses, ., 0, 0, - (2012)
  • Strain and Charge mapping of LED devices by dark-field inline electron holography, ., 0, 0, - (2012)
  • High performance gas sensors with an array of TiO2nano-helixesfabricatedbyobliqueangledeposition, ., 0, 0, - (2011)
  • Nanostructured multilayer antireflection coatings with broadband and omnidirectional characteristics and their application for solar cells, ., 0, 0, - (2011)
  • Improved phosphor conversion efficiency of white LEDs by using conductive color selective filters made of indium-tin-oxide, ., 0, 0, - (2011)
  • Optical Thin Film Materials with Low Refractive Index and Their Applications, ., 0, 0, - (2011)
  • Improved phosphor conversion efficiency of white LEDs by using conductive color selective filters made of indium-tin-oxide, ., 0, 0, - (2011)
  • High performance gas sensors with an array of vertically aligned TiO2nano-helixes, ., 0, 0, - (2011)
  • Strain analysis of InGaN/GaN multi-quantum wells by dark-field inline electron holography, ., 0, 0, - (2011)
  • Influence of dislocation density on temperature stability of GaInN light-emitting diodes, ., 0, 0, - (2011)
  • Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions, ., 0, 0, - (2011)
  • Promises and challenges in light-emitting diodes for lighting applications, ., 0, 0, - (2011)
  • Overcoming efficiency loss mechanisms in GaN-based light-emitting diodes, ., 0, 0, - (2011)
  • High performance gas sensors with an array of vertically aligned TiO2 nano-helixes, ., 0, 0, - (2011)
  • Polarization-mismatch-reduced AlGaInN/GaInN multiple quantum well light-emitting diodes with reduced efficiency droop, ., 0, 0, - (2011)
  • Enhanced light extraction efficiency in GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2010)
  • Overcoming loss mechanisms in GaInN light-emitting diodes, ., 0, 0, - (2010)
  • Characteristics of reverse current in GaInN light-emitting diodes, ., 0, 0, - (2010)
  • Light-extraction efficiency of Light-Emitting Diodes, ., 0, 0, - (2010)
  • light extraction enhancement of Light emitting diodes by graded refractive index anti-reflection contact, ., 0, 0, - (2010)
  • Overcoming the High-Current Loss Mechanism in GaInN Light-Emitting Diodes, ., 0, 0, - (2010)
  • Solid-state lighting revolution – The replacement paradigm and beyond, ., 0, 0, - (2009)
  • Solid-state lighting revolution – The replacement paradigm and beyond, ., 0, 0, - (2009)
  • Challenges and Opportunities in Solid-state Lighting, ., 0, 0, - (2009)
  • Graded-refractive-index Micro-patterns on GaInN Light-emitting Diodes for Enhanced Light Extraction and Control Over the Far Field Emission Pattern, ., 0, 0, - (2009)
  • Nitride Based Light Emitting Diodes Embedded with a Wire-grid Polarizer, ., 0, 0, - (2009)
  • The Origin of the High Diode-ideality Factors in GaInN/GaN Multiple Quantum Well Light-emitting Diodes, ., 0, 0, - (2009)
  • Low-resistance Ohmic Contacts to N-face p-GaN for the Fabrication of Functional Devices, ., 0, 0, - (2009)
  • III-Nitride light-emitting diodes for solid-state lighting revolution, ., 0, 0, - (2009)
  • III-Nitride light-emitting diodes for solid-state lighting revolution, ., 0, 0, - (2009)
  • Enhanced light extraction and controllability of far-field emission pattern of GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
  • Enhanced light extraction and controllability of far-field emission pattern of GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
  • Light-emitting diode designs for high power applications – overcoming high-power loss mechanisms, ., 0, 0, - (2009)
  • Light-emitting diode designs for high power applications – overcoming high-power loss mechanisms, ., 0, 0, - (2009)
  • Design and development of nanostructure based antireflection coatings for EO/IR sensor applications, ., 0, 0, - (2009)
  • Design and development of nanostructure based antireflection coatings for EO/IR sensor applications, ., 0, 0, - (2009)
  • Dual-blue emitting active regions illustrate enhancements in color rendering ability and luminous efficacy in phosphor-converted white light-emitting diodes, ., 0, 0, - (2009)
  • Dual-blue emitting active regions illustrate enhancements in color rendering ability and luminous efficacy in phosphor-converted white light-emitting diodes, ., 0, 0, - (2009)
  • Novel low-refractive-index materials and their applications, ., 0, 0, - (2009)
  • Novel low-refractive-index materials and their applications, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Solid-state lighting – Emerging market opportunity, ., 0, 0, - (2009)
  • Solid-state lighting – Emerging market opportunity, ., 0, 0, - (2009)
  • Light-emitting diodes – Replacement paradigm and beyond, ., 0, 0, - (2009)
  • Light-emitting diodes – Replacement paradigm and beyond, ., 0, 0, - (2009)
  • Energy implications of solid-state lighting technology, ., 0, 0, - (2009)
  • Energy implications of solid-state lighting technology, ., 0, 0, - (2009)
  • Growth and characterization of GaInN blue light-emitting diodes with GaInN quantum barriers, ., 0, 0, - (2009)
  • Growth and characterization of GaInN blue light-emitting diodes with GaInN quantum barriers, ., 0, 0, - (2009)
  • Low-refractive-index materials – A new class of optical thin-film materials, ., 0, 0, - (2009)
  • Low-refractive-index materials – A new class of optical thin-film materials, ., 0, 0, - (2009)
  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities, ., 0, 0, - (2009)
  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities, ., 0, 0, - (2009)
  • Study of efficiency droop in GaInN/GaN and polarization-matched GaInN/AlGaInN and GaInN/GaInN light-emitting diodes, ., 0, 0, - (2009)
  • Study of efficiency droop in GaInN/GaN and polarization-matched GaInN/AlGaInN and GaInN/GaInN light-emitting diodes, ., 0, 0, - (2009)
  • Light-emitting diodes – The replacement paradigm and beyond, ., 0, 0, - (2009)
  • Light-emitting diodes – The replacement paradigm and beyond, ., 0, 0, - (2009)
  • Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
  • Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micro-pillars, ., 0, 0, - (2009)
  • Matching material polarization in GaInN light-emitting diodes – A novel concept for enhancing performance and reducing efficiency droop, ., 0, 0, - (2009)
  • Matching material polarization in GaInN light-emitting diodes – A novel concept for enhancing performance and reducing efficiency droop, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Solid-state lighting revolution and beyond, ., 0, 0, - (2009)
  • Polarization-matching in GaInN light-emitting diodes: a new concept for reducing efficiency droop and enhancing performance, ., 0, 0, - (2009)
  • Polarization-matching in GaInN light-emitting diodes: a new concept for reducing efficiency droop and enhancing performance, ., 0, 0, - (2009)
  • Quantification of porosity and deposition rate of nano-porous films grown by oblique angle deposition, ., 0, 0, - (2008)
  • Quantification of porosity and deposition rate of nano-porous films grown by oblique angle deposition, ., 0, 0, - (2008)
  • Polarized c-plane GaInN/GaN light-emitting diodes, ., 0, 0, - (2008)
  • Polarized c-plane GaInN/GaN light-emitting diodes, ., 0, 0, - (2008)
  • Efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2008)
  • Efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2008)
  • Relevance of Light-Emitting Diodes and Photonics for Energy, ., 0, 0, - (2008)
  • Relevance of Light-Emitting Diodes and Photonics for Energy, ., 0, 0, - (2008)
  • The effect of hole-injection efficiency on efficiency droop of GaN-based light emitters investigated by light-emitting triodes, ., 0, 0, - (2008)
  • The effect of hole-injection efficiency on efficiency droop of GaN-based light emitters investigated by light-emitting triodes, ., 0, 0, - (2008)
  • Design of graded refractive index micro-patterns to enhance light-extraction efficiency in GaInN blue light-emitting diodes, ., 0, 0, - (2008)
  • Design of graded refractive index micro-patterns to enhance light-extraction efficiency in GaInN blue light-emitting diodes, ., 0, 0, - (2008)
  • GaInN vertical-structure light-emitting diodes on bulk GaN substrate with optical enhancement technique: omnidirectional reflectors and surface texture treatment, ., 0, 0, - (2008)
  • GaInN vertical-structure light-emitting diodes on bulk GaN substrate with optical enhancement technique: omnidirectional reflectors and surface texture treatment, ., 0, 0, - (2008)
  • The origin of efficiency droop in GaN-based light-emitting diodes and its solution, ., 0, 0, - (2008)
  • The origin of efficiency droop in GaN-based light-emitting diodes and its solution, ., 0, 0, - (2008)
  • Efficiency droop in GaInN/GaN LEDs: the effect of dislocation density, physical origin, and possible solution, ., 0, 0, - (2008)
  • Efficiency droop in GaInN/GaN LEDs: the effect of dislocation density, physical origin, and possible solution, ., 0, 0, - (2008)
  • Micro-patterned graded-index coatings of co-sputtered TiO2-SiO2 for enhanced light extraction from GaInN light-emitting diodes, ., 0, 0, - (2008)
  • Micro-patterned graded-index coatings of co-sputtered TiO2-SiO2 for enhanced light extraction from GaInN light-emitting diodes, ., 0, 0, - (2008)
  • Recombination mechanisms of GaInN light-emitting diode wafers with various dislocation densities, ., 0, 0, - (2008)
  • Recombination mechanisms of GaInN light-emitting diode wafers with various dislocation densities, ., 0, 0, - (2008)
  • Multilayer nano-structured anti-reflection coatings with broad-band omnidirectional characteristics, ., 0, 0, - (2008)
  • Multilayer nano-structured anti-reflection coatings with broad-band omnidirectional characteristics, ., 0, 0, - (2008)
  • Efforts towards more efficient inorganic light-emitting diodes, ., 0, 0, - (2008)
  • Efforts towards more efficient inorganic light-emitting diodes, ., 0, 0, - (2008)
  • Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2008)
  • Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2008)
  • Low-refractive-index materials – A new class of materials for photonics applications, ., 0, 0, - (2008)
  • Low-refractive-index materials – A new class of materials for photonics applications, ., 0, 0, - (2008)
  • Innovation in optical materials for the advancement of solid-state lighting technologies, ., 0, 0, - (2008)
  • Innovation in optical materials for the advancement of solid-state lighting technologies, ., 0, 0, - (2008)
  • Polarization anisotropy in the light emission of blue GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrate, ., 0, 0, - (2007)
  • Polarization anisotropy in the light emission of blue GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrate, ., 0, 0, - (2007)
  • Investigation on Origin of efficiency droop in GaN-based high-power light-emitting diodes, ., 0, 0, - (2007)
  • Investigation on Origin of efficiency droop in GaN-based high-power light-emitting diodes, ., 0, 0, - (2007)
  • Enhancement of light extraction efficiency in GaInN blue light-emitting diodes by graded-refractive-index antireflection coating of co-sputtered titanium dioxide and silicon dioxide, ., 0, 0, - (2007)
  • Enhancement of light extraction efficiency in GaInN blue light-emitting diodes by graded-refractive-index antireflection coating of co-sputtered titanium dioxide and silicon dioxide, ., 0, 0, - (2007)
  • Effect of structural properties of AlN templates on the optical, electrical, and structural properties of n-type AlGaN, ., 0, 0, - (2007)
  • Effect of structural properties of AlN templates on the optical, electrical, and structural properties of n-type AlGaN, ., 0, 0, - (2007)
  • Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
  • Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
  • Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
  • Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
  • Novel low refractive index materials and their applications, ., 0, 0, - (2007)
  • Novel low refractive index materials and their applications, ., 0, 0, - (2007)
  • Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
  • Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN, ., 0, 0, - (2007)
  • Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
  • Origin of efficiency droop in GaN-based light-emitting diodes, ., 0, 0, - (2007)
  • Light extraction enhancement of GaInN light-emitting diodes by graded-refractive-index ITO anti-reflection contact, ., 0, 0, - (2007)
  • Light extraction enhancement of GaInN light-emitting diodes by graded-refractive-index ITO anti-reflection contact, ., 0, 0, - (2007)
  • Conductive distributed Bragg reflector fabricated by oblique angle deposition from a single material, ., 0, 0, - (2007)
  • Conductive distributed Bragg reflector fabricated by oblique angle deposition from a single material, ., 0, 0, - (2007)
  • Optical thin film materials with low refractive index and their applications, ., 0, 0, - (2007)
  • Optical thin film materials with low refractive index and their applications, ., 0, 0, - (2007)
  • Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2007)
  • Light-emitting diodes-looking back 100 years and looking forward to the next 10 years, ., 0, 0, - (2007)
  • Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions, ., 0, 0, - (2007)
  • Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions, ., 0, 0, - (2007)
  • Enhanced light extraction in GaInN light-emitting diodes with graded-index indium tin oxide layer, ., 0, 0, - (2007)
  • Enhanced light extraction in GaInN light-emitting diodes with graded-index indium tin oxide layer, ., 0, 0, - (2007)
  • Enhanced light-extraction from InGaN quantum wells using refractive-index-matched TiO2, ., 0, 0, - (2007)
  • Enhanced light-extraction from InGaN quantum wells using refractive-index-matched TiO2, ., 0, 0, - (2007)
  • High refractive index nanoparticle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
  • High refractive index nanoparticle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
  • High-refractive index nano-particle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
  • High-refractive index nano-particle-loaded encapsulants for light-emitting diodes, ., 0, 0, - (2007)
  • High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2007)
  • High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2007)
  • Recombination dynamics at dislocations in GaInN-based light-emitting diodes, ., 0, 0, - (2006)
  • Recombination dynamics at dislocations in GaInN-based light-emitting diodes, ., 0, 0, - (2006)
  • Omni-directional reflectors for GaInN vertica-structure light-emitting diodes, ., 0, 0, - (2006)
  • Omni-directional reflectors for GaInN vertica-structure light-emitting diodes, ., 0, 0, - (2006)
  • Extremely high quality AlN grown on (0001) sapphire by metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
  • Extremely high quality AlN grown on (0001) sapphire by metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
  • Low-refractive index materials: A new class of material for optoelectronic and photonic applications, ., 0, 0, - (2006)
  • Low-refractive index materials: A new class of material for optoelectronic and photonic applications, ., 0, 0, - (2006)
  • High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2006)
  • High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • Improvements in light-extraction efficiency of light-emitting diodes with omni-directional reflectors, ., 0, 0, - (2006)
  • Improvements in light-extraction efficiency of light-emitting diodes with omni-directional reflectors, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • Solid-state lighting – Opportunities for fundamental innovation, ., 0, 0, - (2006)
  • AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
  • AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
  • Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
  • Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy, ., 0, 0, - (2006)
  • Highly efficient package configurations for white-light-emitting diode lamps, ., 0, 0, - (2006)
  • Highly efficient package configurations for white-light-emitting diode lamps, ., 0, 0, - (2006)
  • Enhancement of light-extraction in GaN light-emitting diodes by conductive omni-directional reflectors, ., 0, 0, - (2006)
  • Enhancement of light-extraction in GaN light-emitting diodes by conductive omni-directional reflectors, ., 0, 0, - (2006)
  • Improvements in light-extraction efficiency of light-emitting diodes, ., 0, 0, - (2006)
  • Improvements in light-extraction efficiency of light-emitting diodes, ., 0, 0, - (2006)
  • AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
  • AlGaN UV LEDs emitting at 340 nm grown on AlN bulk substrates, ., 0, 0, - (2006)
  • Design of high efficiency packages for white light-emitting diode lamps, ., 0, 0, - (2006)
  • Design of high efficiency packages for white light-emitting diode lamps, ., 0, 0, - (2006)
  • Omni-direction reflectors for light-emitting diodes, ., 0, 0, - (2006)
  • Omni-direction reflectors for light-emitting diodes, ., 0, 0, - (2006)
  • GaN light-emitting triodes for high-efficiency hole injection and light emission, ., 0, 0, - (2006)
  • GaN light-emitting triodes for high-efficiency hole injection and light emission, ., 0, 0, - (2006)
  • Optical Thin Films with Very Low Refractive Index and their application in photonic devices, ., 0, 0, - (2005)
  • Optical Thin Films with Very Low Refractive Index and their application in photonic devices, ., 0, 0, - (2005)
  • High-power packages for phosphor-based white-light-emitting diode lamps, ., 0, 0, - (2005)
  • High-power packages for phosphor-based white-light-emitting diode lamps, ., 0, 0, - (2005)
  • Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor, ., 0, 0, - (2005)
  • Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor, ., 0, 0, - (2005)
  • Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
  • Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
  • Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth, ., 0, 0, - (2005)
  • Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth, ., 0, 0, - (2005)
  • Optical Thin Films with Very Low Refractive Index Consisting of Array of SiO2 Nano-rods for Photonics Applications, ., 0, 0, - (2005)
  • Optical Thin Films with Very Low Refractive Index Consisting of Array of SiO2 Nano-rods for Photonics Applications, ., 0, 0, - (2005)
  • Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
  • Polarization-enhanced ohmic contacts to GaInN-based blue light-emitting diodes, ., 0, 0, - (2005)
  • Trapped whispering-gallery optical modes in white light-emitting diodes lamps with remote phosphor, ., 0, 0, - (2005)
  • Trapped whispering-gallery optical modes in white light-emitting diodes lamps with remote phosphor, ., 0, 0, - (2005)
  • Quantitative assessment of diffusivity and specularity of textured surfaces for light extraction in light-emitting diodes, ., 0, 0, - (2005)
  • Quantitative assessment of diffusivity and specularity of textured surfaces for light extraction in light-emitting diodes, ., 0, 0, - (2005)
  • Improvement of extraction efficiency of GaInN light-emitting diodes by employing diffuse omni-directional reflectors, ., 0, 0, - (2005)
  • Improvement of extraction efficiency of GaInN light-emitting diodes by employing diffuse omni-directional reflectors, ., 0, 0, - (2005)
  • Junction temperature and thermal resistance measurement in deep-UV light-emitting diodes, ., 0, 0, - (2005)
  • Junction temperature and thermal resistance measurement in deep-UV light-emitting diodes, ., 0, 0, - (2005)
  • Enhancement of light extraction in GaInN light-emitting diodes by diffuse omni-directional reflectors, ., 0, 0, - (2005)
  • Enhancement of light extraction in GaInN light-emitting diodes by diffuse omni-directional reflectors, ., 0, 0, - (2005)
  • Junction and carrier temperature measurements in light-emitting diodes using three different methods, ., 0, 0, - (2005)
  • Junction and carrier temperature measurements in light-emitting diodes using three different methods, ., 0, 0, - (2005)
  • Enhancement of light extraction efficiency of GaInN light-emitting diodes by omni-directional diffuse reflectors, ., 0, 0, - (2004)
  • Enhancement of light extraction efficiency of GaInN light-emitting diodes by omni-directional diffuse reflectors, ., 0, 0, - (2004)
  • Junction temperature measurement in deep UV light-emitting diodes, ., 0, 0, - (2004)
  • Junction temperature measurement in deep UV light-emitting diodes, ., 0, 0, - (2004)
  • GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
  • GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
  • Illumination sources based on multiple light-emitting diodes, ., 0, 0, - (2004)
  • Illumination sources based on multiple light-emitting diodes, ., 0, 0, - (2004)
  • GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
  • GaInN Light-Emitting Diodes with Omni-directional Reflectors, ., 0, 0, - (2004)
  • P-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction  20% for LED confinement layers, ., 0, 0, - (2004)
  • P-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction  20% for LED confinement layers, ., 0, 0, - (2004)
  • Metal/GaN Interfacial Nanostructures and their Electrical Properties, ., 0, 0, - (2004)
  • Metal/GaN Interfacial Nanostructures and their Electrical Properties, ., 0, 0, - (2004)
  • Ohmic Contacts for High-Power LEDs, ., 0, 0, - (2004)
  • Ohmic Contacts for High-Power LEDs, ., 0, 0, - (2004)
  • GaInN Light-Emitting Diodes with Omni-Directional Reflectors Using Rare-Earth Metal Oxides, ., 0, 0, - (2003)
  • GaInN Light-Emitting Diodes with Omni-Directional Reflectors Using Rare-Earth Metal Oxides, ., 0, 0, - (2003)
  • Electrical properties of metal contacts on KrF excimer laser irradiated GaN, ., 0, 0, - (2002)
  • Ohmic contacts on p-type GaN for blue-light emitting devices, THE 3RD INTERNATIONAL SYMPOSIUM ON THE ADVANCED FUNCTIONAL MATERIALS IN THE NORTH-EAST REGION, 0, 0, - (2000)
  • Ohmic contacts on p-type GaN for blue-light emitting devices, THE 3RD INTERNATIONAL SYMPOSIUM ON THE ADVANCED FUNCTIONAL MATERIALS IN THE NORTH-EAST REGION, 0, 0, - (2000)
  • Surface photovoltage effects in photoemission from Au-GaN interfaces: Importance for band bending evaluation, ., 0, 0, - (2000)
  • Evidence of band bending at the surface of p-type GaN measured by synchrotron radiation photoemission spectroscopy, ., 0, 0, - (2000)
  • Evidence of band bending at the surface of p-type GaN measured by synchrotron radiation photoemission spectroscopy, ., 0, 0, - (2000)
  • Reduction of Ohmic Contact Resistivity on P-type GaN by Surface Treatment, ., 0, 0, - (1999)
  • Reduction of Ohmic Contact Resistivity on P-type GaN by Surface Treatment, ., 0, 0, - (1999)
  • The effect of surface treatment on p-GaN ohmic contact, ., 0, 0, - (1998)
  • The effect of surface treatment on p-GaN ohmic contact, ., 0, 0, - (1998)

단행본

  • Advanced Semiconductor Materials and Devices, Research Signpost, ., 김종규 (2008)
  • Organic Lighting Emitting Devices – Synthesis, Properties, and Applications, Wiley VCH, 405, 김종규 (2006)
  • “Light-emitting diodes”, Kirk-Othmer Encyclopedia of Chemical Technology, John Wiley & Sons, Inc., 434, 김종규 (2005)
  • The Physics of Semiconductor Devices, Allied Publishers PVT. Limited, ., 김종규 (2005)

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  • 학부생연구프로그램-최일용(신소재)-스퍼터 경사각증착법을 적용한 ZNO NANO-GENERATOR연구, 포항공과대학교 (2012-2012)
  • 전력변환효율 75%급 LED 광소자공정 및 표준 분석기술 개발, 한국광기술원 (2012-2013)
  • 나노막대형 무분극 초고효율 백색광 발광소자, (주)포스코 (2012-2013)
  • 태양전지용 나노구조 광대역-다방향성 무반사막 개발, 재단법인한국연구재단 (2012-2013)
  • 나노막대형 무분극 초고효율 백색광 발광소자, 포항공대산학협력단 (2012-2013)
  • 태양전지용 나노구조 광대역-다방향성 무반사막 개발, 재단법인한국연구재단 (2012-2013)
  • 산업 및 의료용 DEEP-UV LED 기술개발, 삼성전자(주) (2012-2013)
  • 4.7408(GRN) 이월과제, 재단법인한국연구재단 (2012-2013)
  • PASSIVATION 및 무반사막 멀티기능 다층박막 기술, 포항공대산학협력단 (2013-2013)
  • (김재원-신소재)응용 맞춤형 광학 필터(APPLICATION SPECIFIC OPTICAL FILTERS ON DEMAND), 포항공과대학교 (2013-2013)
  • 전력변환효율 75%급 LED 광소자공정 테스트베드 및 평가표준 기술개발, 한국광기술원 (2013-2014)
  • 나노막대형 무분극 초고효율 백색광 발광소자, (주)포스코 (2013-2014)
  • 태양전지용 나노구조 광대역-다방향성 무반사막 개발, 재단법인한국연구재단 (2013-2014)
  • 나노막대형 무분극 초고효율 백색광 발광소자, 포항공대산학협력단 (2013-2014)
  • 산업 및 의료용 DEEP UV LED 기술 개발, 삼성전자(주) (2013-2014)
  • GLAAS/FLEXIBLE 기판 및 투명전극용 광대역-다방향성 무반사막 기술, 포항공대산학협력단 (2014-2014)
  • S_직접비_김종규, 포항공과대학교 (2014-2020)
  • S_간접비_김종규, 포항공과대학교 (2014-2020)
  • 효율 50% ALL-2D-NITRIDES UV 에미터, 재단법인 삼성미래기술육성재단 (2014-2015)
  • 전력변환효율 75%급 LED 광소자 공정 및 표준 분석 기술개발, 한국산업기술평가관리원 (2014-2015)
  • 산업 및 의료용 DEEP UV LED 기술 개발, 삼성전자(주) (2014-2015)
  • [S/S] 2차원 나노재료를 이용한 철강 부식 방지 및 철강 기판 패터닝 기술 개발, (주)포스코 (2015-2016)
  • 효율 50% ALL-2D-NITRIDES UV 에미터, 재단법인 삼성미래기술육성재단 (2015-2019)
  • 4.11072_이월과제, 재단법인 삼성미래기술육성재단 (2015-2015)
  • 자체연구개발과제[2015년 신설], 포항공과대학교 (2015-2035)
  • [G/S2차]3차원 하이브리드 나노 구조 전극 기반 효율적인 광전기화학적 물분해 수소 생산 연구, (주)포스코 (2015-2016)
  • , 재단법인한국연구재단 (2015-2016)
  • 유전적 알고리즘으로 설계된 맞춤형 3차원 하이브리드 나노 광소재 개발, 재단법인한국연구재단 (2015-2016)
  • [S/S]2차원 나노재료를 이용한 철강 부식 방지 및 철강 기판 연구, (주)포스코 (2016-2017)
  • 변인 제어된 이종계면에서의 반응 메커니즘 탐구에 기반한 이산화탄소 환원 광촉매 전극 개발, 재단법인한국연구재단 (2018-2019)
  • 변인 제어된 이종계면에서의 반응 메커니즘 탐구에 기반한 이산화탄소 환원 광촉매 전극 개발, 재단법인한국연구재단 (2019-2020)

IP

  • 김종규,김동영,한남,정호경,김재원, 질화물 반도체 물질의 제조 방법, 한국, 10-2017-0001327 (2017)
  • 김종규,이승희,이종원, 2차원 질화물 반도체 기반 심자외선 발광소자 및 이의 제조방법, 한국, 10-2017-0001326 (2017)
  • 김종규,이종원,김동영, 질화물 반도체 발광소자 및 이의 제조방법, 일본, 2016-561853 (2016)
  • 김종규,김재원,황선용,김동영,정호경, 유연성 반도체 필름 및 그 제조방법, 한국, 10-2016-0084351 (2016)
  • 김종규,김재원,황선용,김동영,정호경, 유연성 반도체 필름 및 그 제조방법, 한국, 10-2016-0084351 (2016)
  • 김종규,정호경,황선용,한남, 금속 기판 패터닝을 통한 질화붕소 화합물 반도체의 선택적 영역 성장 방법, 한국, 10-2016-0084259 (2016)
  • 김종규,이승희, 양자 우물 구조를 포함하는 2차원 구조의 질화물 반도체 기반 심자외선 발광소자 및 그 제조 방법, 한국, 10-2016-0084258 (2016)
  • 김종규,최일용,김동영, 효과적인 광화학 또는 광전기화학 반응을 위한 3차원 하이브리드 나노 구조 소자 및 그 제조 방법, 한국, 10-2016-0035394 (2016)
  • 김종규,최일용,김동영, 효과적인 광화학 또는 광전기화학 반응을 위한 3차원 하이브리드 나노 구조 소자 및 그 제조 방법, 한국, 10-2016-0035394 (2016)
  • 김종규,김동영,신종화,김명준, 유전 알고리즘 기반 3차원 나노 구조를 가지는 광소재의 설계 방법, 한국, 10-2016-0035817 (2016)
  • 김종규,김동영,신종화,김명준, 유전 알고리즘 기반 3차원 나노 구조를 가지는 광소재의 설계 방법, 한국, 10-2016-0035817 (2016)
  • 김종규,김동영,박준혁,이종원, 반도체 발광소자 및 이의 제조방법, 한국, 10-2016-0034840 (2016)
  • 김종규,박준혁,황선용, 유도성장을 이용한 나노선 어레이 제조방법, USA, 14/975,865 (2015)
  • 김종규,박준혁,황선용, 유도성장을 이용한 나노선 어레이 제조방법, USA, 14/975,865 (2015)
  • 김종규,김동영, 질화물 반도체 자외선 발광소자, 중국, 201480057220.6 (2015)
  • 김종규,김동영, 질화물 반도체 자외선 발광소자, 일본, 2016-525309 (2015)
  • 김종규,김동영, 질화물 반도체 물질 및 그 제조 방법, 한국, 10-2015-0103053 (2015)
  • 김종규,김동영, 질화물 반도체 물질 및 그 제조 방법, 한국, 10-2015-0103053 (2015)
  • 김종규,이승희, 2차원 구조를 갖는 질화물 반도체를 이용한 심자외선 발광 소자 및 그 제조 방법, 한국, 10-2015-0101056 (2015)
  • 김종규,이승희, 2차원 구조를 갖는 질화물 반도체를 이용한 심자외선 발광 소자 및 그 제조 방법, 한국, 10-2015-0101056 (2015)
  • 김종규,이종원,김동영, 질화물 반도체 발광소자 및 이의 제조방법, -, PCT/KR2015/0020 (2015)
  • 김종규,김동영, 질화물 반도체 자외선 발광소자, -, PCT/KR2014/0102 (2014)
  • 김종규,황선용,권현아, 나노 구조를 갖는 금속산화물반도체 가스센서 및 그 제조 방법, USA, 14/407,966 (2014)
  • 김종규,황선용,권현아, 나노 구조를 갖는 금속산화물반도체 가스센서 및 그 제조 방법, USA, 14/407,966 (2014)
  • 김종규,황선용,박준혁, 유도성장을 이용한 나노선 어레이 제조방법, 한국, 10-2014-0187927 (2014)
  • 김종규,황선용,박준혁, 유도성장을 이용한 나노선 어레이 제조방법, 한국, 10-2014-0187927 (2014)
  • 김종규,이종원,김동영, 질화물 반도체 발광소자 및 이의 제조방법, 한국, 10-2014-0046421 (2014)
  • 김종규,박준혁,황선용, 나노임프린트용 몰드 및 그 제조방법, 한국, 10-2014-0057053 (2014)
  • 김종규,오승재, 다이크로익 필터 및 그 제조방법, 한국, 10-2014-0018554 (2013)
  • 김종규,오승재, 박막봉지 유닛 및 이의 제조 방법, 한국, 10-2014-0044721 (2013)
  • 김종규,오승재, 박막봉지 유닛 및 이의 제조 방법, 한국, 10-2014-0044721 (2013)
  • 김종규,김동영, 질화물 반도체 자외선 발광소자, 한국, 10-2013-0135335 (2013)
  • 김종규,김동영,이종원, 플립칩 발광소자, 한국, 10-2013-0135334 (2013)
  • 김종규,김동영,이종원, 플립칩 발광소자, 한국, 10-2013-0135334 (2013)
  • 김종규,김동영,이종원, 질화물 반도체 발광소자 및 그 제조방법, 한국, 10-2013-0132076 (2013)
  • 김종규,김동영,이종원, 질화물 반도체 발광소자 및 그 제조방법, 한국, 10-2013-0132076 (2013)
  • 김종규,최일용, 나노구조 광전극을 가지는 물 분해 광전기화학 셀 및 그 제조방법, 한국, 10-2013-0098367 (2013)
  • 김종규,황선용,박준혁, 반도체 발광소자 어레이, 한국, 10-2013-0161467 (2013)
  • 김종규,황선용,박준혁, 반도체 발광소자, 한국, 10-2013-0161471 (2013)
  • 김종규,권현아,오승재, 나노 구조를 갖는 유/무기 하이브리드 태양전지 및 그 제조방법, 한국, 10-2012-0152529 (2012)
  • 김종규,권현아,오승재, 나노 구조를 갖는 유/무기 하이브리드 태양전지 및 그 제조방법, 한국, 10-2012-0152529 (2012)
  • 김종규,이승희, 3차원 나노 구조체를 구비한 염료감응형 태양전지와 그 제조방법, 한국, 10-2013-0061700 (2012)
  • 김종규,이승희, 3차원 나노 구조체를 구비한 염료감응형 태양전지와 그 제조방법, 한국, 10-2013-0061700 (2012)
  • 김종규,김동영,황선용, 발광 효율이 개선된 반도체 발광 소자, 한국, 10-2012-0102300 (2012)
  • 김종규,권현아,오승재, 유기태양전지 및 그의 제조방법, 한국, 10-2012-0148704 (2012)
  • 김종규,권현아,오승재, 유기태양전지 및 그의 제조방법, 한국, 10-2012-0148704 (2012)
  • 김종규,권현아, 유기태양전지 및 그의 제조방법, 한국, 10-2012-0148705 (2012)
  • 김종규,권현아, 유기태양전지 및 그의 제조방법, 한국, 10-2012-0148705 (2012)
  • 김종규,박원지,허종,오승재, 태양 전지용 커버 글라스 및 이의 제조방법, 한국, 10-2012-0102842 (2012)
  • 김종규,박원지,허종,오승재, 태양 전지용 커버 글라스 및 이의 제조방법, 한국, 10-2012-0102842 (2012)
  • 김종규,황선용,권현아, 나노 구조를 갖는 금속산화물반도체 가스센서 및 그 제조 방법, -, PCT/KR2012/0047 (2012)
  • 김종규,김용대, 터치스크린 패널 및 그 제조방법, 한국, 10-2012-0042268 (2012)
  • 김종규,김동영,황선용,최주원,한유대, 그레이드 초격자 구조의 전자 차단층을 갖는 반도체 발광 소자, 한국, 10-2012-0053735 (2012)
  • 김종규,김동영,황선용,한유대,최주원, 전자 차단층을 갖는 반도체 발광 소자 , 한국, 10-2012-0056244 (2012)
  • 김종규,김효은,최용훈, 백색광 발광 다이오드 및 그 제조방법, 한국, 10-2011-0116419 (2011)
  • 김종규,김효은,최용훈, 백색광 발광 다이오드 및 그 제조방법, 한국, 10-2011-0116419 (2011)
  • 김종규,황선용,권현아,장호원,윤석진, 나노 구조를 갖는 금속산화물반도체 가스센서 및 그 제조방법, 한국, 10-2011-0039370 (2011)