Ajoint research between POSTECH (Pohang University of Science and Technology) and Max Planck Institute of Microstructure Physics, Halle, has produced an advanced technology applicable to the development of the permanent memory, FeRAM, which can save 176 billion bits per square inch (published in Nature Nanotechnology, vol. 3, page 402). FeRAM has attracted many researchers’ interest because of its excellent characters such as nonvolatility, fast read and write, and high reliability. However, limitation in realizing large scale integration of ferroelectrics on a single chip has hindered t..