Research

국제전문학술지

• Improved Memory Performance through Integration of Ferroelectric and Ovonic Threshold Switching Layer, IEEE Electron Device Letters, , 46, 44-47 (2025 )
• Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique, physica status solidi RRL Rapid Research Letters, , 18, - (2024 )
• Highperformance resistive random access memory using twodimensional electron gas electrode and its switching mechanism analysis, NANOTECHNOLOGY, , 35, - (2024 )
• Accurate Evaluation of Highk HZOZrO2 Films by Morphotropic Phase Boundary, IEEE Electron Device Letters, , 45, 28-31 (2024 )
• Subthreshold BiasInduced Threshold Voltage Shift of the Ovonic Threshold Switch, IEEE Electron Device Letters, , 45, 128-131 (2024 )
• Enhancement of NbO2based oscillator neuron device performance via cryogenic operation, Nanotechnology, , 35, - (2024 )
• Bypass Resistive RAM with Interface SwitchingBased Resistive RAM and InGaZnO Bypass Transistor for VNAND Applications, IEEE Electron Device Letters, , 45, 192-195 (2024 )
• Variability and Reliability Study of NanoScale Hfsub05subZrsub05subOsub2sub Ferroelectric Devices Using Osub3sub Treatment, IEEE Electron Device Letters, , 45, 344-347 (2024 )
• 3D Stackable VerticalSensing Electrochemical RandomAccess Memory Using IonPermeable WS2 Electrode for HighDensity Neuromorphic Systems, Advanced Functional Materials, , 34, - (2024 )
• Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf05Zr05O2 Utilizing Schottky Emission Current in Switchable Diode, IEEE Electron Device Letters, , 45, 2078-2081 (2024 )
• Enhanced Memory Window and Excellent Endurance in FeFET with Ultrathin 2DEG Oxide Channel, IEEE Electron Device Letters, , 45, 1792-1795 (2024 )
• Excellent Endurance gt 1013 of Charge Trap Memory based on HxWO3 Charge Trap Layer with Shallow Trap Level Using Hydrogen Spillover, IEEE Electron Device Letters, , 45, 1804-1807 (2024 )
• Controllable multilevel quantized conduction states in vertical CBRAM using Cunanodot ion source, Applied Physics Letters, , 125, - (2024 )
• Enhancing SelectorOnly Memory Reliability Through MultiStep Write Pulse, IEEE Electron Device Letters, , 45, 2383-2386 (2024 )
• Quantitative Analysis and Characterization of Sidewall Defects in InGaNBased Blue MicroLEDs, ACS Applied Electronic Materials, , 6, 8377-8383 (2024 )
• MgIonBased Electrochemical Synapse with Superior Retention, IEEE Electron Device Letters, , 45, 2557-2560 (2024 )
• Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory From Fundamentals to Development and Beyond, Advanced Electronic Materials, , , - (2024 )
• Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design, Advanced Electronic Materials, , , - (2024 )
• Exploring the Morphotropic Phase Boundary in HfOsub2sub‐Based Ferroelectrics for Advanced High‐k Dielectrics, Advanced Materials Technologies, , , - (2024 )
• Enhanced ONOFF Ratio 4x105 and Robust Endurance gt1010 in an InGaZnOHfxZr1xO2 Ferroelectric Diode via Defect Engineering, IEEE Transactions on Electron Devices, , 71, 2238-2242 (2024 )
• Understanding Switching Mechanism of SelectorOnly Memory Using SeBased Ovonic Threshold Switch Device, IEEE Transactions on Electron Devices, , 71, 3351-3357 (2024 )
• Volatile threshold switching devices for hardware security primitives Exploiting intrinsic variability as an entropy source, Applied Physics Reviews, , 11, - (2024 )
• Demonstration of 1 V Reliable FeRAM Operation V c Engineering Using QuasiChirality of Hf1x Zr x O2 in a Nanolaminate Structure, ACS Applied Materials Interfaces, , 16, 55627-55636 (2024 )
• Highly Scalable Vertical Bypass RRAM Using InterfaceType Resistive Switching Mechanism for VNand Memory Applications, IEEE Transactions on Electron Devices, , 71, 7970-7977 (2024 )
• Novel HighSpeed Ternary Logic Using StepShaped Threshold Switch, IEEE Electron Device Letters, , 44, 368-371 (2023 )
• Cell Design Considerations for Ovonic Threshold SwitchBased 3D CrossPoint Array, IEEE Transactions on Electron Devices, , 70, 1034-1041 (2023 )
• Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy, AIP Advances, , 13, 25053- (2023 )
• NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current 300 nA and low power operation, APPLIED PHYSICS LETTERS, , 122, - (2023 )
• Composition optimization of HfxZr1xO2thin films to achieve the morphotrophic phase boundary for high k dielectrics, Journal of Applied Physics, , 133, - (2023 )
• Exploring the CuttingEdge Frontiers of Electrochemical Random Access Memories ECRAMs for Neuromorphic Computing Revolutionary Advances in MaterialtoDevice Engineering, SMALL, , , - (2023 )
• Defect Engineering of BTe Ovonic Threshold Switch OTS With Nitrogen Doping for Improved Electrical and Reliability Performance, IEEE Electron Device Letters, , 44, 1468-1471 (2023 )
• Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of EdgeAI Hardware, IEEE ELECTRON DEVICE LETTERS, , 44, 1372-1375 (2023 )
• Integrated Logic Circuits Based on WaferScale 2DMoS2 FETs Using BuriedGate Structures, Nanomaterials, , 13, - (2023 )
• Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using IonPermeable Graphene Electrodes, IEEE Transactions on Electron Devices, , 70, 3951-3957 (2023 )
• Improved Switching Uniformity of SCLCRRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution, ACS Applied Electronic Materials, , 5, 6178-6188 (2023 )
• Improving the selector characteristics of ovonic threshold switch via UV treatment process, Applied Physics Letters, , 123, - (2023 )
• High polarization and wakeup free ferroelectric characteristics in ultrathin Hf05Zr05O2 devices by control of oxygendeficient layer, Nanotechnology, , 33, - (2022 )
• Enhanced Switching Characteristics of an Ovonic Threshold Switching Device With an UltraThin MgO Interfacial Layer, IEEE ELECTRON DEVICE LETTERS, , 43, 220-223 (2022 )
• A grease for domain walls motion in HfO2based ferroelectrics, Nanotechnology, , 33, - (2022 )
• Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications, Advanced Electronic Materials, , , - (2022 )
• Effect of Silicon Doping in B–Te B4Te6 Binary Ovonic Threshold Switch System, IEEE Electron Device Letters, , 43, 643-646 (2022 )
• Prospect and challenges of analog switching for neuromorphic hardware, Applied Physics Letters, , 120, - (2022 )
• Atomic Threshold Switch Based on All2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility, ADVANCED FUNCTIONAL MATERIALS, , , - (2022 )
• Twostep deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an insitu crystallized TiNHf05Zr05O2TiN device, Nano Express, , 3, - (2022 )
• Determination of damage model parameters using nano and bulkscale digital image correlation and the finite element method, Journal of Materials Research and Technology, , 17, 392-403 (2022 )
• Strategies to Improve the Synaptic Characteristics of OxygenBased Electrochemical RandomAccess Memory Based on Material Parameters Optimization, ACS Applied Materials and Interfaces, , 14, 13450-13457 (2022 )
• Linear Frequency Modulation of NbO2Based Nanoscale Oscillator With LiBased Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network, FRONTIERS IN NEUROSCIENCE, , 16, - (2022 )
• Study of highpressure hydrogen annealing effects on InGaZnO thinfilm transistors, APPLIED PHYSICS LETTERS, , 121, - (2022 )
• Exploiting Read Current Noise of TiOx Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware, IEEE ELECTRON DEVICE LETTERS, , 43, 1571-1574 (2022 )
• Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device, IEEE Journal of the Electron Devices Society, , 10, 666-669 (2022 )
• Improvement of endurance and switching speed in Hf1x Zr x O2 thin films using a nanolaminate structure, NANOTECHNOLOGY, , 33, - (2022 )
• Synergy effect of microwave annealing and highpressure hydrogen annealing on PolySi thinfilm transistor, Nanotechnology, , 33, - (2022 )
• OnChip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical RandomAccess Memory Synapse for Neuromorphic Computing Application, ACS Nano, , 16, 12214-12225 (2022 )
• Improved Synaptic Characteristics of OxideBased Electrochemical Random Access Memory at Elevated Temperatures Using Integrated MicroHeater, IEEE Transactions on Electron Devices, , 69, 2218-2221 (2022 )
• Nonvolatile FrequencyProgrammable Oscillator With NbOsub2sub and LiBased ElectroChemical Random Access Memory for Coupled OscillatorsBased Temporal Pattern Recognition System, IEEE Electron Device Letters, , 43, 1041-1044 (2022 )
• IntegrateandFire Neuron With LiBased Electrochemical Random Access Memory Using Native Linear Current Integration Characteristics, IEEE Transactions on Electron Devices, , 69, 4889-4893 (2022 )
• Defect Engineering to Achieve Wakeup Free HfO2Based Ferroelectrics, ADVANCED ENGINEERING MATERIALS, , 23, - (2021 )
• Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen VacanciesRich SubTaOx in PtTa2O5Ti Device Stacks, PHYSICA STATUS SOLIDI AAPPLICATIONS AND MATERIALS SCIENCE, , , - (2021 )
• A new approach to achieving strong ferroelectric properties in TiNHf05Zr05O2TiN devices, Nanotechnology, , 32, - (2021 )
• Enhancement of ovonic threshold switching characteristics using nanometerscale virtual electrode formed within ultrathin hafnium dioxide interlayer, APPLIED PHYSICS LETTERS, , 118, - (2021 )
• Improved Threshold Switching and Endurance Characteristics Using Controlled AtomicScale Switching in a 05 nm Thick Stoichiometric HfO2 Layer, ADVANCED ELECTRONIC MATERIALS, , 7, - (2021 )
• Hybrid Memory Device MemorySelector with Scalable and Simple Structure for XNORBased Neural Network Applications, Advanced Electronic Materials, , , - (2021 )
• Li memristorbased MOSFET synapse for linear IV characteristic and processing analog input neuromorphic system, JAPANESE JOURNAL OF APPLIED PHYSICS, , 60, - (2021 )
• SingleAtom QuantumPoint Contact Switch Using Atomically Thin Hexagonal Boron Nitride, SMALL, , 17, - (2021 )
• Large Remnant Polarization in a WakeUp Free Hf05Zr05O2 Ferroelectric Film through Bulk and Interface Engineering, Acs Applied Electronic Materials, , 3, 629-638 (2021 )
• An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in AgBased Devices, ADVANCED ELECTRONIC MATERIALS, , 7, - (2021 )
• Improved synaptic functionalities of Libased nanoionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer, NANOTECHNOLOGY, , 32, - (2021 )
• Effects of high pressure oxygen annealing on Hf05Zr05O2 ferroelectric device, NANOTECHNOLOGY, , 32, - (2021 )
• AllSolidState Oxygen Ion Electrochemical RandomAccess Memory for Neuromorphic Computing, ADVANCED ELECTRONIC MATERIALS, , 7, - (2021 )
• Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive ArrayBased Hardware Neural Networks, IEEE ELECTRON DEVICE LETTERS, , 42, 763-766 (2021 )
• Ferroelectric and Dielectric Properties of Hf05Zr05O2 Thin Film Near Morphotropic Phase Boundary, Physica Status Solidi A Applications and Materials Science, , 218, - (2021 )
• Neural Network Training Acceleration With RRAMBased Hybrid Synapses, FRONTIERS IN NEUROSCIENCE, , 15, - (2021 )
• Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training, IEEE Electron Device Letters, , 42, 609-612 (2021 )
• Towards an ideal highkappa HfO2ZrO2based dielectric, NANOSCALE, , 13, 13631-13640 (2021 )
• Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device, APPLIED PHYSICS LETTERS, , 118, - (2021 )
• A CMOScompatible morphotropic phase boundary, NANOTECHNOLOGY, , 32, - (2021 )
• Improved TurnOff Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , 9, 864-867 (2021 )
• Impact of electrolyte density on synaptic characteristics of oxygenbased ionic synaptic transistor, Applied Physics Letters, , 119, - (2021 )
• Surface Diffusion and Epitaxial SelfPlanarization for WaferScale SingleGrain Metal Chalcogenide Thin Films, Advanced Materials, , 33, - (2021 )
• Deep Insight into SteepSlope Threshold Switching with Record Selectivity 4 × 1010 Controlled by MetalIon Movement through VacancyInducedPercolation Path QuantumLevel Control of HybridFilament, Advanced Functional Materials, , 31, - (2021 )
• Hybrid memory characteristics of NbOxthreshold switching devices, Applied Physics Letters, , 119, - (2021 )
• Improvement of Synaptic Properties in OxygenBased Synaptic Transistors Due to the Accelerated Ion Migration in SubStoichiometric Channels, Advanced Electronic Materials, , 7, - (2021 )
• Ionic Sieving Through OneAtomThick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing, Small, , 17, - (2021 )
• Multinary Data Processing Based on Nonlinear Synaptic Devices, Journal of Electronic Materials, , 50, 3471-3477 (2021 )
• Hf1–xZrxO2ZrO2 Nanolaminate Thin Films as a Highκ Dielectric, Acs Applied Electronic Materials, , 3, 5632-5640 (2021 )
• Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing, ADVANCED ELECTRONIC MATERIALS, , 6, - (2020 )
• Threshold Voltage Drift in TeBased Ovonic Threshold Switch Devices Under Various Operation Conditions, IEEE ELECTRON DEVICE LETTERS, , 41, 191-194 (2020 )
• Engineering of defects in resistive random access memory devices, JOURNAL OF APPLIED PHYSICS, , 127, - (2020 )
• Excellent synaptic behavior of lithiumbased nanoionic transistor based on optimal WO27 stoichiometry with high ion diffusivity, NANOTECHNOLOGY, , 31, - (2020 )
• Evolution of 07 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices, APPLIED PHYSICS LETTERS, , 116, - (2020 )
• Experimental Determination of the Tunable Threshold Voltage Characteristics in a Ag amp x2093Te amp x2081amp x208bamp x2093Al amp x2082O amp x2083TiO amp x2082Based Hybrid Memory Device, IEEE ELECTRON DEVICE LETTERS, , 41, 713-716 (2020 )
• WOxBased Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 19, 594-600 (2020 )
• Understanding of SelectorLess 1S1R Type CuBased CBRAM Devices by Controlling SubQuantum Filament, ADVANCED ELECTRONIC MATERIALS, , 6, - (2020 )
• Improved Pattern Recognition Accuracy of Hardware Neural Network Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching OTSBased Fuse Device, IEEE ELECTRON DEVICE LETTERS, , 41, 1436-1439 (2020 )
• Sodiumbased nanoionic synaptic transistor with improved retention characteristics, NANOTECHNOLOGY, , 31, - (2020 )
• Pr07Ca03MnO3Based ThreeTerminal Synapse for Neuromorphic Computing, IEEE ELECTRON DEVICE LETTERS, , 41, 1500-1503 (2020 )
• Resistive Switching in FewLayer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer, ACS APPLIED MATERIALS INTERFACES, , 12, 46288-46295 (2020 )
• Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film, APPLIED PHYSICS LETTERS, , 117, - (2020 )
• Analysis of bending behavior of TiN particlereinforced martensitic steel using microdigital image correlation, Materials Science and Engineering A, , 794, - (2020 )
• Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices from Materials Perspective, IEEE Transactions on Electron Devices, , 67, 2878-2883 (2020 )
• Excellent data retention characteristic of Tebased conductivebridge RAM using semiconducting Te filament for storage class memory, SOLIDSTATE ELECTRONICS, , 153, 8-11 (2019 )
• Hardware implementation of neural network using preprogrammed resistive device for pattern recognition, SOLIDSTATE ELECTRONICS, , 153, 79-83 (2019 )
• WW3x based threeterminal synapse device with linear conductance change and high onoff ratio for neuromorphic application, APPLIED PHYSICS EXPRESS, , 12, - (2019 )
• RRAMbased synapse devices for neuromorphic systems, FARADAY DISCUSSIONS, , 213, 421-451 (2019 )
• An excellent performance of a CTe OTS device with amorphous Ge interfacial layer for selector application, APPLIED PHYSICS LETTERS, , 114, - (2019 )
• RRAMbased synapse devices for neuromorphic systems vol 213 pg 421 2019, FARADAY DISCUSSIONS, , 213, 589-589 (2019 )
• Various Threshold Switching Devices for Integrate and Fire Neuron Applications, Advanced Electronic Materials, , 5, - (2019 )
• Investigation of IV Linearity in TaOxBased RRAM Devices for Neuromorphic Applications, IEEE Journal of the Electron Devices Society, , 7, 404-408 (2019 )
• Microstructural engineering in interfacetype synapse device for enhancing linear and symmetric conductance changes, NANOTECHNOLOGY, , 30, - (2019 )
• 3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for HighDensity CrossPoint Memory Applications, ADVANCED ELECTRONIC MATERIALS, , 5, - (2019 )
• Improved Endurance of HfO2Based MetalFerroelectricInsulatorSilicon Structure by HighPressure Hydrogen Annealing, IEEE ELECTRON DEVICE LETTERS, , 40, 1092-1095 (2019 )
• StuckatFault Tolerant Schemes for Memristor Crossbar ArrayBased Neural Networks, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 66, 2937-2945 (2019 )
• One transistortwo resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices, NANOTECHNOLOGY, , 30, - (2019 )
• Quantized Conduction Device with 6Bit Storage Based on Electrically Controllable Break Junctions, ADVANCED ELECTRONIC MATERIALS, , , - (2019 )
• Ferroelectric materials for neuromorphic computing, APL MATERIALS, , 7, - (2019 )
• Fieldinduced nucleation switching in binary ovonic threshold switches, APPLIED PHYSICS LETTERS, , 115, - (2019 )
• Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity, SCIENTIFIC REPORTS, , 9, - (2019 )
• Structural Engineering of LiBased Electronic Synapse for High Reliability, IEEE ELECTRON DEVICE LETTERS, , 40, 1992-1995 (2019 )
• Understanding of proton induced synaptic behaviors in threeterminal synapse device for neuromorphic systems, NANOTECHNOLOGY, , 30, - (2019 )
• Effect of conductance linearity and multilevel cell characteristics of TaOxbased synapse device on pattern recognition accuracy of neuromorphic system, NANOTECHNOLOGY, , 29, - (2018 )
• Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems, IEEE ELECTRON DEVICE LETTERS, , 39, 312-315 (2018 )
• Ultrasensitive artificial synapse based on conjugated polyelectrolyte, NANO ENERGY, , 48, 575-581 (2018 )
• Additional hardening in harmonic structured materials by strain partitioning and back stress, Materials Research Letters, , 6, 261-267 (2018 )
• Understanding and Optimization of Pulsed SET Operation in HfOxBased RRAM Devices for Neuromorphic Computing Applications, IEEE ELECTRON DEVICE LETTERS, , 39, 672-675 (2018 )
• A CTebased binary OTS device exhibiting excellent performance and high thermal stability for selector application, NANOTECHNOLOGY, , 29, - (2018 )
• NbO2Based Frequency Storable Coupled Oscillators for Associative Memory Application, IEEE Journal of the Electron Devices Society, , 6, 250-253 (2018 )
• Effect of cation amount in the electrolyte on characteristics of AgTiO2 based threshold switching devices, NANOTECHNOLOGY, , 29, - (2018 )
• Hybrid Selector With Excellent Selectivity and Fast Switching Speed for XPoint Memory Array, IEEE ELECTRON DEVICE LETTERS, , 39, 1171-1174 (2018 )
• CMOS compatible lowpower volatile atomic switch for steepslope FET devices, APPLIED PHYSICS LETTERS, , 113, - (2018 )
• Steep Slope FieldEffect Transistors With BTeBased Ovonic Threshold Switch Device, IEEE Journal of the Electron Devices Society, , 6, 821-824 (2018 )
• Improved Synaptic Behavior of CBRAM Using Internal voltage Divider for Neuromorphic Systems, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 3976-3981 (2018 )
• Modeling and SystemLevel Simulation for Nonideal Conductance Response of Synaptic Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 3996-4003 (2018 )
• Zn1xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters, Scientific Reports, , 8, - (2018 )
• Reliable Multivalued Conductance States in TaOx Memristors through Oxygen PlasmaAssisted Electrode Deposition with in SituBiased Conductance State Transmission Electron Microscopy Analysis, ACS Applied Materials and Interfaces, , 10, 29757-29765 (2018 )
• Implementation of Convolutional Kernel Function Using 3D TiOx Resistive Switching Devices for Image Processing, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 65, 4716-4718 (2018 )
• Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy, Advanced Electronic Materials, , 4, 1800360- (2018 )
• Bidirectional NonFilamentary RRAM as an Analog Neuromorphic Synapse Part I AlMoPr07Ca03MnO3 Material Improvements and Device Measurements, IEEE Journal of the Electron Devices Society, , 6, 146-155 (2018 )
• Bidirectional NonFilamentary RRAM as an Analog Neuromorphic Synapse Part II Impact of AlMoPr07Ca03MnO3 Device Characteristics on Neural Network Training Accuracy, IEEE Journal of the Electron Devices Society, , 6, 169-178 (2018 )
• Perspective A review on memristive hardware for neuromorphic computation, Journal of Applied Physics, , 124, - (2018 )
• Fieldinduced nucleation in threshold switching characteristics of electrochemical metallization devices, APPLIED PHYSICS LETTERS, , 111, - (2017 )
• Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 1220-1223 (2017 )
• Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems, IEEE ELECTRON DEVICE LETTERS, , 38, 1023-1026 (2017 )
• NanometerScale Phase Transformation Determines Threshold and Memory Switching Mechanism, ADVANCED MATERIALS, , 29, - (2017 )
• Effect of a SelfLimited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 6, 440-442 (2017 )
• In situ TEM observation on the interfacetype resistive switching by electrochemical redox reactions at a TiNPCMO interface, Nanoscale, , 9, 582-593 (2017 )
• Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory, NANOTECHNOLOGY, , 28, - (2017 )
• Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for HighDensity Memory Array Application, IEEE ELECTRON DEVICE LETTERS, , 38, 568-571 (2017 )
• HfZrOxBased Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 732-735 (2017 )
• Multilayered NiOyNbOxNiOy fast driftfree threshold switch with high onoff ratio for selector application, Scientific Reports, , 7, - (2017 )
• Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2based RRAM devices for artificial neuron and synapse elements, MICROELECTRONIC ENGINEERING, , 182, 42-45 (2017 )
• SelfLimited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications, IEEE ELECTRON DEVICE LETTERS, , 38, 1532-1535 (2017 )
• Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device, ECS Journal of Solid State Science and Technology, , , - (2017 )
• Effects of Liner Thickness on the Reliability of AgTeTiO2Based Threshold Switching Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 64, 4763-4767 (2017 )
• Reduced offcurrent of NbO2 by thermal oxidation of polycrystalline Nb wire, ECS Journal of Solid State Science and Technology, , 6, 641-643 (2017 )
• Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, , 25, 1821-1830 (2017 )
• Excellent Threshold Selector Characteristics of Cu2Sbased Atomic Switch Device, ECS Journal of Solid State Science and Technology, , 6, P586-P588 (2017 )
• Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAMCircuit Coevaluation, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION VLSI SYSTEMS, , 25, 1821-1830 (2017 )
• Monolithic integration of AgTeTiO2 based threshold switching device with TiN liner for steep slope fieldeffect transistors, Technical Digest International Electron Devices Meeting IEDM, , , 25.3.1-25.3.4 (2017 )
• Excellent threshold switching device Ioff �� 1 pA with atomscale metal filament for steep slope 5 mVdec ultra low voltage Vdd 025 V FET applications, Technical Digest International Electron Devices Meeting IEDM, , , 34.7.1-37.7.4 (2017 )
• Nonvolatile memory crossbar arrays for nonvon neumann computing, Cognitive Systems Monographs, , 31, 129-149 (2017 )
• Neuromorphic computing using nonvolatile memory, Advances in Physicsx, , 2, 89-124 (2017 )
• CommunicationImpact of Filament Instability in an Ag2SBased ConductiveBridge RAM for CrossPoint Selector Applications, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , , - (2016 )
• Introduction of WO3 Layer in a CuBased Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, , , - (2016 )
• Role of Local Chemical Potential of Cu on Data Retention Properties of CuBased ConductiveBridge RAM, IEEE ELECTRON DEVICE LETTERS, , , - (2016 )
• Comprehensive scaling study of NbO2 insulatormetaltransition selector for cross point array application, APPLIED PHYSICS LETTERS, , , - (2016 )
• Retention modeling for ultrathin density of Cubased conductive bridge random access memory CBRAM, AIP ADVANCES, , , - (2016 )
• Effects of HighPressure Hydrogen Annealing HPHA on Reliability Characteristics of RRAM, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , , - (2016 )
• CommunicationComprehensive Assessment of a BacktoBack Schottky Diode with Ultrathin TiO2 Layer for CrossPoint Selector Applications, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q188-Q190 (2016 )
• Improved reset breakdown strength in a HfOxbased resistive memory by introducing RuOx oxygen diffusion barrier, AIP ADVANCES, , 6, - (2016 )
• Dynamics of electroforming and electrically driven insulatormetal transition in NbOx selector, APPLIED PHYSICS LETTERS, , 108, - (2016 )
• Steep Slope FieldEffect Transistors With AgTiO2Based Threshold Switching Device, IEEE ELECTRON DEVICE LETTERS, , 37, 932-934 (2016 )
• CommunicationHourglassShaped MetalFilament Switching Device with MultiLayer AlOXTiO2 Oxide Electrolytes, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q219-Q221 (2016 )
• Scalable Neuron Circuit Using ConductiveBridge RAM for Pattern Reconstructions, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 63, 2610-2613 (2016 )
• TiOxBased RRAM Synapse With 64Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing, IEEE ELECTRON DEVICE LETTERS, , 37, 1559-1562 (2016 )
• Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 63, 5064-5067 (2016 )
• Analog Synapse Device With 5b MLC and Improved Data Retention for Neuromorphic System, IEEE Electron Device Letters, , 37, 1067-1070 (2016 )
• Improved Synaptic Behavior under Identical Pulses using AlOxHfO2 Bilayer RRAM Array for Neuromorphic Systems, IEEE Electron Device Letters, , 37, 994-997 (2016 )
• Atomicscale quantification of interdiffusion and dopant localization in GeSbTebased memory devices, Applied Physics Letters, , 109, - (2016 )
• Organic coresheath nanowire artificial synapses with femtojoule energy consumption, Science advances, , 2, - (2016 )
• Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory, Physical Sciences Reviews, , 1, - (2016 )
• Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering, IEEE ELECTRON DEVICE LETTERS, , 36, 32-34 (2015 )
• Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation, SOLIDSTATE ELECTRONICS, , 104, 70-74 (2015 )
• Structurally Engineered Stackable and Scalable 3D Titaniumoxide Switching devices for Highdensity Nanoscale Memory, ADVANCED MATERIALS, , 27, 59-64 (2015 )
• Effect of nitrogen doping on variability of TaOxRRAM for lowpower 3bit MLC applications, ECS Solid State Letters, , 4, 25-28 (2015 )
• Electronic system with memristive synapses for pattern recognition, SCIENTIFIC REPORTS, , 5, - (2015 )
• Optimization of Conductance Change in Pr1xCaxMnO3Based Synaptic Devices for Neuromorphic Systems, IEEE ELECTRON DEVICE LETTERS, , 36, 457-459 (2015 )
• Tradeoff between number of conductance states and variability of conductance change in Pr07Ca03MnO3based synapse device, APPLIED PHYSICS LETTERS, , 106, - (2015 )
• Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron, IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, , 62, 2410-2419 (2015 )
• Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory, IEEE ELECTRON DEVICE LETTERS, , 36, 238-240 (2015 )
• Experimental Demonstration and Tolerancing of a LargeScale Neural Network 165 000 Synapses Using PhaseChange Memory as the Synaptic Weight Element, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3498-3507 (2015 )
• A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy, MICRON, , 79, 101-109 (2015 )
• The bandgap energy dependence of metal oxides on nonlinear characteristics in the HfO2based resistive random access memory, MICROELECTRONIC ENGINEERING, , 147, 321-324 (2015 )
• Improved threshold switching characteristics of multilayer NbOx for 3D selector application, MICROELECTRONIC ENGINEERING, , 147, 318-320 (2015 )
• Bidirectional threshold switching in engineered multilayer Cu2OAgCu2OCu2O stack for crosspoint selector application, APPLIED PHYSICS LETTERS, , 107, - (2015 )
• Comprehensive analysis of electro thermally driven nanoscale insulatormetal transition SmNiO3based selector for crosspoint memory array, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, 4DD09- (2015 )
• Threshold Selector With High Selectivity and Steep Slope for CrossPoint Memory Array, IEEE ELECTRON DEVICE LETTERS, , 36, 681-683 (2015 )
• Effects of NDoped GeSbTe Buffer Layer on Switching Characteristics of CuAl2O3Based CBRAM, ECS SOLID STATE LETTERS, , 4, Q25-Q28 (2015 )
• Resistance controllability and variability improvement in a TaOxbased resistive memory for multilevel storage application, APPLIED PHYSICS LETTERS, , 106, - (2015 )
• Switching mechanism of AlLa1xSrxMnO3 resistance random access memory I Oxygen vacancy formation in perovskites, RSC ADVANCES, , 5, 102772-102779 (2015 )
• Threshold switching behavior of AgSi based selector device and hydrogen doping effect on its characteristics, AIP ADVANCES, , 5, 127221- (2015 )
• Demonstration of Low Power 3bit Multilevel Cell Characteristics in a TaOxBased RRAM by Stack Engineering, IEEE ELECTRON DEVICE LETTERS, , 36, 32-34 (2015 )
• Control of Cu Conductive Filament in Complementary Atom Switch for CrossPoint Selector Device Application, IEEE Electron Device Letters, , 35, 60-62 (2014 )
• Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM, IEEE Electron Device Letters, , 35, 214-216 (2014 )
• Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory, Applied Physics Letters, , 104, 52108- (2014 )
• Dependence of reactive metal layer on resistive switching in a bilayer structure TaHfOx filament type resistive random access memory, Applied Physics Letters, , 104, 83507- (2014 )
• Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse, IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, , 61, 2933-2941 (2014 )
• Internal Resistor of MultiFunctional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access Memory, NANOSCALE RESEARCH LETTERS, , 9, 364- (2014 )
• Effects of HighPressure Hydrogen Annealing on the Formation of Conducting Filaments in FilamentType Resistive RandomAccess Memory, JOURNAL OF ELECTRONIC MATERIALS, , 43, 3635-3639 (2014 )
• A nitrogentreated memristive device for tunable electronic synapses, Semiconductor Science and Technology, , 29, 104006-104010 (2014 )
• Hardware implementation of associative memory characteristics with analoguetype resistiveswitching device, NANOTECHNOLOGY, , 25, 495204- (2014 )
• Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs, SOLIDSTATE ELECTRONICS, , 102, 42-45 (2014 )
• Nonlinear oscillations of a sessile drop on a hydrophobic surface induced by ac electrowetting, PHYSICAL REVIEW E, , 90, - (2014 )
• Highly NonLinear Nitrogen Doped ZnO Based Selector Device for CrossPoint Array, ECS SOLID STATE LETTERS, , 3, P136-P139 (2014 )
• Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of SelectorLess ReRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 1022-1024 (2014 )
• NonLinear IV Characteristics of TiOy Film by Optimizing Thickness and Trap Density for SelectorLess ReRAM, ECS SOLID STATE LETTERS, , 3, P117-P119 (2014 )
• Effects of Ti Buffer Layer on Retention and Electrical Characteristics of CuBased ConductiveBridge Random Access Memory CBRAM, ECS SOLID STATE LETTERS, , 3, P120-P122 (2014 )
• Access devices for 3D crosspoint memory, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, , 32, - (2014 )
• Lowtemperature spinonglass method involving highpressure annealing for filling highaspectratio structures, JAPANESE JOURNAL OF APPLIED PHYSICS, , 53, - (2014 )
• Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 636-638 (2014 )
• Tunnel barrier engineering of titanium oxide for high nonlinearity of selectorless resistive random access memory, APPLIED PHYSICS LETTERS, , 104, - (2014 )
• Optimized LightningRod Effect to Overcome TradeOff Between Switching Uniformity and OnOff Ratio in ReRAM, IEEE ELECTRON DEVICE LETTERS, , 35, 214-216 (2014 )
• Complementary Resistive Switching in Niobium OxideBased Resistive Memory Devices, IEEE Electron Device Letters, , 34, 235-237 (2013 )
• Effects of highpressure annealing on random telegraph signal noise characteristic of source follower block in CMOS image sensor, IEEE Electron Device Letters, , 34, 190-192 (2013 )
• Thermallyactivated device nonlinearity in resistanceswitching memory for crosspoint array applications, Applied Physics Letters, , 102, 122115- (2013 )
• ThresholdSwitching Characteristics of a NanothinNbO2layerbased PtNbO2Pt stack for Use in Crosspointtype Resistive Memories, Microelectronic Engineering, , 107, 33-36 (2013 )
• Hydrogenated IGZO thinfilm transistors using highpressure hydrogen annealing, IEEE Transactions on Electron Devices, , 60, 2537-2541 (2013 )
• Interface engineering for low power and uniform resistive switching in bilayer structural filament type ReRAM, Microelectronic Engineering, , 109, 385-388 (2013 )
• Selectorless RRAM with nonlinearity of device for crosspoint array applications, Microelectronic Engineering, , 109, 360-363 (2013 )
• Nanoscale RRAMbased synaptic electronics toward a neuromorphic computing device, Nanotechnology, , 24, 384009- (2013 )
• Defect Engineering Using Bilayer Structure in FilamentType RRAM, IEEE Electron Device Letters, , 34, 1250-1252 (2013 )
• Highly reliable resistive switching without an initial forming operation by defect engineering, IEEE Electron Device Letters, , 34, 1515-1517 (2013 )
• Vertically Stacked ReRAM Composed of a Bidirectional Selector and CBRAM for Crosspoint Array Applications, IEEE Electron Device Letters, , 34, 1512-1514 (2013 )
• Multilayeroxidebased bidirectional cell selector device for crosspoint resistive memory applications, Applied Physics Letters, , 103, 202113- (2013 )
• Cooccurrence of Threshold Switching and Memory Switching in PtNbOxPt Cells for Crosspoint Memory Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 236-238 (2012 )
• Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment, JAPANESE JOURNAL OF APPLIED PHYSICS, , 51, - (2012 )
• Operation Voltage Control in Complementary Resistive Switches Using Heterodevice, IEEE ELECTRON DEVICE LETTERS, , 33, 600-602 (2012 )
• MIMtype cell selector for highdensity and lowpower crosspoint memory application, MICROELECTRONIC ENGINEERING, , 93, 81-84 (2012 )
• Improved Switching Variability and Stability by Activating a Single Conductive Filament, IEEE ELECTRON DEVICE LETTERS, , 33, 646-648 (2012 )
• Highly Uniform and Reliable Resistance Switching Properties in Bilayer WOxNbOx RRAM Devices, PHYSICA STATUS SOLIDI AAPPLICATIONS AND MATERIALS SCIENCE, , 209, 1179-1183 (2012 )
• Improved switching uniformity in resistive random access memory containing metaldoped electrolyte due to thermally agglomerated metallic filaments, APPLIED PHYSICS LETTERS, , 100, - (2012 )
• Selfselective Characteristics of Nanoscale VOx Devices for Highdensity ReRAM Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 718-720 (2012 )
• Indepth Study on the Effect of Active Area Scaledown of Solutionprocessed TiOx, IEEE ELECTRON DEVICE LETTERS, , 33, 869-871 (2012 )
• Ferroelectricityinduced resistive switching in PbZr 052Ti 048O 3Pr 07Ca 03MnO 3Nbdoped SrTiO 3 epitaxial heterostructure, APPLIED PHYSICS LETTERS, , 100, - (2012 )
• A study of the leakage current in TiNHfO2TiN capacitors, MICROELECTRONIC ENGINEERING, , 95, 71-73 (2012 )
• High Current Density and Nonlinearity Combination of Selection Device Based on TaOXTiO2TaOX Structure for One SelectorOne Resistor Arrays, ACS NANO, , 6, 8166-8172 (2012 )
• Defect engineering reduction effect of hydrogen atom impurities in HfO2based resistiveswitching memory devices, NANOTECHNOLOGY, , 23, - (2012 )
• LowPower and Controllable Memory Window in PtPr07Ca03MnO3YttriaStabilized ZirconiaW Resistive RandomAccess Memory Devices, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 12, 3253-3255 (2012 )
• Selfformed Schottky barrier induced selectorless RRAM for crosspoint memory applications, PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS, , 6, 454-456 (2012 )
• Programmable analogue circuits with multilevel memristive device, ELECTRONICS LETTERS, , 48, 1415-1416 (2012 )
• Improvement of resistive switching uniformity by introducing a thin NbOx interface layer, ECS SOLID STATE LETTERS, , 1, Q35-Q38 (2012 )
• Communication-Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide Electrolytes, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, , 5, Q219-Q221 (0020 )
• Nonvolatile memory crossbar arrays for non-von neumann computing, Cognitive Systems Monographs, , 31, 129-149 (0020 )
• VerticalSwitching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas, Advanced Electronic Materials, , , - (0020 )

학회발표

• Record Endurance 1012 cycles High Polarization 2Pr 50 μCcm2 and 10year Data Retention 85 oC in HZO Capacitors with WellOrdered Ferroelectric Domain Structures via 2DWS2 Interface, Technical Digest International Electron Devices Meeting IEDM, 0, 0, - (2024)
• Achieving 3bit Operation in Selectoronlymemory by Controlling Variability with Microwave Annealing and Bipolar Pulse Scheme, Technical Digest International Electron Devices Meeting IEDM, 0, 0, - (2024)
• Highly Scalable Vertical Bypass RRAM VBRRAM for 3D v NAND Memory, Digest of Technical Papers Symposium on VLSI Technology, 0, 0, - (2024)
• 3D Stackable VerticalSensing Electrochemical RandomAccess Memory Using APPECVDGrown WS2 Electrode for Neuromorphic Application, , 0, 0, - (2024)
• Reliable HZO 05 Based Ferroelectric Memory with Ultralow Operation Voltage of 11V by Synergy Effect of Thickness Scaling and Microwave Annealing, , 0, 0, - (2024)
• Superior Ion Retention of Divalent Magnesiumion Based SiMgF2WOx Electrochemical RAM for Neuromorphic Systems, , 0, 0, - (2024)
• Selectorless VCBRAM with high nonlinearity and lowpower operation via tunnelgap controllable twodimensional electron gas 2DEG electrode, , 0, 0, - (2024)
• Superior retention 1 year 85 °C and memory window 18 V using ultrathin HZO FTJ with OTS selector for Xpoint memory applications, Technical Digest International Electron Devices Meeting IEDM, 0, 0, - (2023)
• Enhancing Sebased Selectoronly Memory with Ultrafast Write Speed 10 ns and Superior Retention Characteristics 10 years at RT via Material Design and UV Treatment Engineering, Technical Digest International Electron Devices Meeting IEDM, 0, 0, - (2023)
• Simple Binary InTe OTS with Subnm HfOxBuffer Layer for 3D Vertical Xpoint Memory Applications, Digest of Technical Papers Symposium on VLSI Technology, 0, 0, - (2023)
• Experimental Demonstration of ProbabilisticBit pbit Utilizing Stochastic Oscillation of Threshold Switch Device, Digest of Technical Papers Symposium on VLSI Technology, 0, 0, - (2023)
• Channel thickness dependent optical bandgap observed from the ptype tellurium thin film transistor, , 0, 0, - (2023)
• Ferroelectric Diode with Large OnOff Ratio and Robust Endurance by Microwave Annealing in WIGZOHZOPt Stack, , 0, 0, - (2023)
• Hardware Dropout Using Stochastic Property of Ovonic Threshold Switch, , 0, 0, - (2023)
• NbO2 Selector Device with Ge2Sb2Te5 Thermal Barrier for Low Off Current and Low Power Operation, , 0, 0, - (2023)
• Toward Sub1V FRAM Ultralow Field Operation and Excellent Retention 10y85°C by Stack Engineering, , 0, 0, - (2022)
• Effect of dead layer on ferroelectric HZO films for low thermal budget, , 0, 0, - (2022)
• Excellent Switching Performances of TiONHZOMoS2 Ferroelectric Diode, , 0, 0, - (2022)
• A Thermally Programmable ECRAM for Neuromorphic Computing, , 0, 0, - (2022)
• Highly Scalable 30 nm and Ultralowenergy 5fJpulse Vertical Sensing ECRAM with Ideal Synaptic Characteristics Using Ionpermeable Graphene Electrodes, 2022 International Electron Devices Meeting IEDM, 0, 0, - (2022)
• Improving the SiGeAsTe Ovonic Threshold Switching OTS Characteristics by Microwave Annealing for Excellent Endurance 1011 and Low Drift Characteristics, Digest of Technical Papers Symposium on VLSI Technology, 0, 0, 320-321 (2022)
• HighSpeed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET, 2021 IEEE International Electron Devices Meeting, 0, 0, - (2021)
• Hardware Neural Network using Hybrid Synapses via Transfer Learning WOx NanoResistors and TiOx RRAM Synapse for EnergyEfficient EdgeAI Sensor, 2021 IEEE International Electron Devices Meeting, 0, 0, - (2021)
• Improved Onchip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention 108 s of Pr07Ca03MnO3x ECRAM Synapse Device for Hardware Neural Network, 2021 IEEE International Electron Devices Meeting, 0, 0, - (2021)
• Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system, 2021 Symposium on VLSI Technology, 0, 0, - (2021)
• OTSbased AnalogtoStochastic Converter for FullyParallel Weight Update in Crosspoint Array Neural Networks, 2021 Symposium on VLSI Technology, 0, 0, - (2021)
• MgTe OTS selector with Low Ioff 100 pA Fast Switching Speed τd 7 ns and High Thermal Stability 400 °C 30min for Xpoint Memory Applications, 2021 Symposium on VLSI Technology, 0, 0, - (2021)
• Defect Engineering을 통한 TiNH05Z05O2TiN 커패시터의 Wakeup Effect와 강유전성 개선, 제 28회 한국반도체학술대회, 0, 0, - (2021)
• Highlystable 3 fluctuation Agbased Threshold Switch with Extremelow OFF Current of 01 pA Extremehigh Selectivity of 109 and High Endurance of 109, 2020 IEEE International Electron Devices Meeting, 0, 0, - (2020)
• Improved Switching Speed Characteristics of Agdoped HfO2 Atomic Switch Devices, The 27th Korean Conference on Semiconductors 제 27회 한국반도체학술대회, 0, 0, - (2020)
• Effects of Highpressure Hydrogen Annealing on the Ferroelectric Properties of WAlHfO2W Stacks, The 27th Korean Conference on Semiconductors 제 27회 한국반도체학술대회, 0, 0, - (2020)
• Synaptic Device Failure Analysis of ArrayBased Neuromorphic System Using Sigmoidal TS Neuron, The 27th Korean Conference on Semiconductors 제 27회 한국반도체학술대회, 0, 0, - (2020)
• Sodium Ion Based Threeterminal Synapse Device with Near Ideal Synaptic Behavior and Improved Retention for Neuromorphic Systems, The 27th Korean Conference on Semiconductors 제 27회 한국반도체학술대회, 0, 0, - (2020)
• Ultrathin 10nm Dualoxide Al2O3TiO2 Hybrid Device MemorySelector with Extremely Low Ioff 1nA and Ireset 1nA for 3D Storage Class Memory, 2019 Symposium on VLSI Technology Digest of Technical Papers, 0, 0, - (2019)
• Proton–Based Three–Terminal Synapse Device with Analog Conductance Change and Linear IV Characteristics for Neuromorphic Systems, 제 26회 한국반도체학술대회, 0, 0, - (2019)
• NbO2Based IMT Device for Neuromorphic Applications, 제 26회 한국반도체학술대회, 0, 0, - (2019)
• Thermally Stable Tebased Binary OTS Device for Selector Application, NonVolatile Memory Technology Symposium 2018, 0, 0, - (2018)
• Three Terminal Synapse Device with Linear Conductance Change and Linear IV Characteristics, 2018 IEEE Silicon Nanoelectronics Workshop, 0, 0, - (2018)
• Protonbased Threeterminal Synapse Device with Symmetric and Analog Conductance Change Characteristics for Neuromorphic Systems, 2018 IEEE Silicon Nanoelectronics Workshop, 0, 0, - (2018)
• Hardware Neural Network for Pattern Recognition Using PreProgrammed Resistive Device, 2018 IEEE Silicon Nanoelectronics Workshop, 0, 0, - (2018)
• Evaluation of Weight Quantization Method for Neural Network using TaOx RRAM, 2018 IEEE Silicon Nanoelectronics Workshop, 0, 0, - (2018)
• Improved OnCurrent of AgNiOTiO2Pt Threshold Switching Device by Suppressing the Ag Incorporation, 제 25회 한국반도체학술대회, 0, 0, - (2018)
• Thermally Stable Resistive Switching Characteristics of TeBased ConductiveBridge Memoryby Optimizing ZrTe Composition, 제 25회 한국반도체학술대회, 0, 0, - (2018)
• Hardware Implementation of Neural Network Using PreProgrammed Resistive Device for Pattern Recognition, 제 25회 한국반도체학술대회, 0, 0, - (2018)
• Evaluation of Weight Quantization Method in Neural Network with TaOxBased RRAM, 제 25회 한국반도체학술대회, 0, 0, - (2018)
• NbO2 based threshold switch device with high operating temperature 85°C for steepslope MOSFET 2mVdec with ultralow voltage operation and improved delay time, 2017 IEEE International Electron Devices Meeting IEDM, 0, 0, - (2017)
• Study on Insulator metal transition characteristics of NbO2 for selector device, NonVolatile Memory Technology Symposium 2017NVMTS 2017, 0, 0, - (2017)
• Reducing Circuit Design Complexity for Neuromorphic Machine Learning Systems Based on NonVolatile Memory Arrays, 2017 IEEE International Symposium on Circuits and Systems ISCAS, 0, 0, - (2017)
• Excellent threshold switching device I OFF 1 pA with atomscale metal filament for steep slope 5 mVdec ultra low voltage V DD 025 V FET applications, 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2016 IEDM, 0, 0, - (2016)
• Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors, 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (2016 IEDM), 0, 0, - (2016)
• Accelerating machine learning with NonVolatile Memory Exploring device and circuit tradeoffs, IEEE INTERNATIONAL CONFERENCE ON REBOOTING COMPUTING ICRC 2016, 0, 0, - (2016)
• Largescale neural networks implemented with NonVolatile Memory as the synaptic weight element Impact of conductance response, 46TH EUROPEAN SOLIDSTATE DEVICE RESEARCH CONFERENCE ESSDERC, 0, 0, - (2016)
• TeBased Amorphous Binary OTS Device with Excellent Selector Characteristics for Xpoint Memory, 2016 SYMPOSIA ON VLSI TECHNOLOGY AND CIRCUITS, 0, 0, - (2016)
• Full Chip Integration of 3D CrossPoint ReRAM with LeakageCompensating Write Driver and DisturbanceAware Sense Amplifier, 2016 SYMPOSIA ON VLSI TECHNOLOGY AND CIRCUITS, 0, 0, - (2016)
• Multilevel Conductance Switching of a HfO2 RRAM Array Induced by Controlled Filament for Neuromorphic Applications, IEEE SILICON NANOELECTRONICS WORKSHOP 2016 SNW2016, 0, 0, - (2016)
• Improved Endurance of RRAM by Optimizing Reset Bias Scheme in 1T1R Configuration to Suppress Reset Breakdown, IEEE SILICON NANOELECTRONICS WORKSHOP 2016 SNW2016, 0, 0, - (2016)
• Bidirectional Threshold Switching in AgCu2Obased Multilayer Stack for CrossPoint Selector Application, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Demonstration of BiDirectional Selector in 8 inch Wafer Process with Fully CMOS Compatibility for ReRAM CrossPoint Array, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Resistance Controllability and Variability Improvement in a TaOx based Resistive Memory for Multilevel Storage Application, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Reliability of HourGlass Shaped Filament in a Cubased Al2O3WO3 Conductive Bridge RAM System, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Suppression of the Reset Breakdown Failure by using RuO2 Electrode in HfOxbased RRAM, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Effects of NGST Buffer Layer on Switching Characteristics of CBRAM, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Effects of Gate Bias on Reset Failure in HfO2 based 1T1R ReRAM Cell, 제23회 한국반도체학술대회, 0, 0, - (2016)
• Origin of Leakage Current of NbOx Film and Improved Threshold Switching Characteristics of Multilayer NbOx Selector, 제23회 한국반도체학술대회, 0, 0, - (2016)
• High density neuromorphic system with MoPr07Ca03MnO3 synapse and NbO2 IMT oscillator neuron, , 0, 0, - (2015)
• Study on the Effect of Oxygen Vacancy Modulation of Tunnel Barrier and Switching Layer of ReRAM on Low Leakage current and Voltage Symmetry for ReRAM Crosspoint Array, , 0, 0, - (2015)
• AC pulse characteristics of 1SSelector1RReRAM device, , 0, 0, - (2015)
• Improved Threshold Switching Characteristics of Multilayer NbOx for 3D Selector Application, , 0, 0, - (2015)
• Comprehensive Methodology for ReRAM and Selector Design Guideline of Crosspoint Array, , 0, 0, - (2015)
• Multistate resistance switching and variability analysis of HfOx Based RRAM for ultrahigh density memory applications, , 0, 0, - (2015)
• Towards High Performance Selector Device for 3D Stacked CrossPoint Arrays, , 0, 0, - (2015)
• Hardware Implementation of Associative Memory Characteristics, , 0, 0, - (2015)
• TiOxbased Filamentary ReRAM Synapse for Neuromorphic Systems, , 0, 0, - (2015)
• Multistate resistance controllability and variability analysis of binary oxide RRAM for ultrahigh density memory applications, , 0, 0, - (2015)
• SubOxide Dependence of Insulator Metal Transition Characteristics on 3D Structural Niobium Oxide Selector, , 0, 0, - (2015)
• Improvement in reliability characteristics retention and endurance of RRAM by using highpressure hydrogen annealing, , 0, 0, - (2015)
• Selectorless ReRAM with an Excellent Selectivity by the Tunnel Barrier Engineered Multilayer Titanium Oxide and Triangular Shaped AC Pulse, , 0, 0, - (2015)
• Effect of TiOxbased tunnel barrier on nonlinearity and switching reliability of resistive random access memory, , 0, 0, - (2014)
• The Effect of Nitrogen doped GST Buffer Layer on Switching Characteristics of ConductiveBridging RAM, , 0, 0, - (2014)
• 8’’Waferscale HfOxbased RRAM for 1S1R Crosspoint Memory Applications, , 0, 0, - (2014)
• Electrothermal driven nanoscale IMT characteristics of SmNiO3 for selector application of crosspoint memory array, , 0, 0, - (2014)
• Electrical and Reliability Characteristics of a Scaled 30nm Tunnel Barrier Selector WTa2O5TaOxTiO2TiN with Excellent Performance JMAX 107Acm2, , 0, 0, - (2014)
• Resistiveswitching Analogue Memory Device for Neuromorphic Application, , 0, 0, - (2014)
• Improvement in Reliability Characteristics retention and endurance of RRAM by using HighPressure Hydrogen Annealing, , 0, 0, - (2014)
• Direct Observation of Interfacial Switching Process of PrxCa1xMnO3Based Resistive Random Access Memory Devices Using in situ TEM, , 0, 0, - (2014)
• Building Artificial Brains using Redoxbased Memristive Synapses, , 0, 0, - (2014)
• An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy, , 0, 0, - (2014)
• Excellent NonLinear IV Characteristics of TiHfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application, , 0, 0, - (2014)
• MetalInsulatorTransition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility, , 0, 0, - (2014)
• Improved synaptic characteristics of filamentary ReRAM by adopting interfacial oxide for neuromorphic device application, , 0, 0, - (2014)
• Improvement in the ONOFF Ratio 107 and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application, , 0, 0, - (2014)
• A TwoStep Set Operation for Reliability of ReRAM with TripleLayer ReRAM, , 0, 0, - (2014)
• Improved Reliability of RRAM by Optimizing Pulse Shape to Minimize Current Overshoot, , 0, 0, - (2014)
• Neuromorphic Speech Systems Using Advanced ReRAMBased Synapse, , 0, 0, - (2013)
• Nanoscale 10nm 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode, , 0, 0, - (2013)
• Selectorless ReRAM with an Excellent NonLinearity and Reliability by the BandGap Engineered MultiLayer Titanium Oxide and Triangular Shaped AC Pulse, , 0, 0, - (2013)
• BEOL Compatible 300oC TiNTiOxTaTiN 3D nanoscale 10nm IMT Selector, , 0, 0, - (2013)
• Conducting filament engineering by triplelayer RRAM for uniform resistive switching, , 0, 0, - (2013)
• Study on nanoscale threshold switching behavior of NbOx film for ReRAM selector application, , 0, 0, - (2013)
• Excellent Reliability and Switching Uniformity of RRAM by Optimizing SETRESET Pulse Shape to Minimize Current Overshoot, , 0, 0, - (2013)
• A TwoStep Set Operation for Highly Uniform Resistive Swtiching ReRAM by Controllable Filament, , 0, 0, - (2013)
• Selectorless RRAM with Nonlinearity of Device for Crosspoint Array Applications, , 0, 0, - (2013)
• Interface engineering for low power and uniform resistive switching in bilayer structural filament type ReRAM, , 0, 0, - (2013)
• Multilayer tunnel barrier Ta2O5TaO xTiO2 engineering for bipolar RRAM selector applications, , 0, 0, - (2013)
• RRAMbased Synapse for Neuromorphic System with Pattern Recognition Function, , 0, 0, - (2012)
• Programmable Analog Circuits with Multilevel Memristive device, , 0, 0, - (2012)
• TiOx Layer Engineering for Producing NonLinear Characteristic in HfOxbased Resistive Random Access Memory, , 0, 0, - (2012)
• Hybrid Memory Device with Both Memory and Selector Characteristics, , 0, 0, - (2012)
• Selector Devices for Crosspoint ReRAM, , 0, 0, - (2012)
• Ultrathin 10nm Nb2O5NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications, , 0, 0, - (2012)
• Varistortype Bidirectional Switch JMAX107Acm2 Selectivity104 for 3D Bipolar Resistive Memory Arrays, , 0, 0, - (2012)
• Bidirectional Selection Device Characteristics of Ultra‐Thin3nm TiO2 layer for 3D Vertically Stackable ReRAM Application, , 0, 0, - (2012)
• Increasing Interfacial Fixed Charge at Al2O3Si Using High Pressure Oxygen Annealing for Solar Cell Application, , 0, 0, - (2012)
• Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor, , 0, 0, - (2012)
• A new read scheme usingbuilt in selectivity for highdensity crosspoint array resistive switching memory application, , 0, 0, - (2012)
• Ferroelectricity Induced Resistance Switching in PZTPCMONbSTO Epitaxial Heterostructure, , 0, 0, - (2012)